| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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SyncMOS |
2 MEGABIT / 5 VOLT CMOS FLASH MEMORY s 256Kx8-bit Organization s Address Access Time: 70, 90, 120, 150 ns s Single 5V ± 10% Power Supply s Sector Erase Mode Operation s 16KB Boot Block (lockable) s 512 bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycl |
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SyncMOS |
1 MEGABIT / 5 VOLT CMOS FLASH MEMORY s 128Kx8-bit Organization s Address Access Time: 70, 90, 120 ns s Single 5V ± 10% Power Supply s Sector Erase Mode Operation s 8KB Boot Block (lockable) s 512 bytes per Sector, 256 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Program Cycle Ti |
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SyncMOS |
1 MEGABIT / 5 VOLT CMOS FLASH MEMORY s 128Kx8-bit Organization s Address Access Time: 70, 90, 120 ns s Single 5V ± 10% Power Supply s Sector Erase Mode Operation s 8KB Boot Block (lockable) s 512 bytes per Sector, 256 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Program Cycle Ti |
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SyncMOS |
(S29C51004T / S29C51004B) 4M-Bit 5-Volt CMOS Flash Memory s s s s s s 512Kx8-bit Organization Address Access Time: 70, 90, 120 ns Single 5V ± 10% Power Supply Sector Erase Mode Operation 16KB Boot Block (lockable) 1K bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycle Time |
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SyncMOS |
(S29C51004T / S29C51004B) 4M-Bit 5-Volt CMOS Flash Memory s s s s s s 512Kx8-bit Organization Address Access Time: 70, 90, 120 ns Single 5V ± 10% Power Supply Sector Erase Mode Operation 16KB Boot Block (lockable) 1K bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycle Time |
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SyncMOS |
2 MEGABIT / 5 VOLT CMOS FLASH MEMORY s 256Kx8-bit Organization s Address Access Time: 70, 90, 120, 150 ns s Single 5V ± 10% Power Supply s Sector Erase Mode Operation s 16KB Boot Block (lockable) s 512 bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycl |
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Desde 2024. D4U Semiconductor.
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