Supertex VP0 Hoja de datos

No.	parte #	Fabricante	Descripción
1	VP0210N5	Supertex Inc	P-Channel Enhancement-Mode Vertical DMOS Power FETs
2	VP05E	Supertex	P-Channel Enhancement-Mode Vertical DMOS FETs o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low C,ss and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Chan
3	VP0206N2	Supertex Inc	P-Channel Enhancement-Mode Vertical DMOS Power FETs
4	VP0206N3	Supertex Inc	P-Channel Enhancement-Mode Vertical DMOS Power FETs
5	VP0206N5	Supertex Inc	P-Channel Enhancement-Mode Vertical DMOS Power FETs
6	VP0210N2	Supertex Inc	P-Channel Enhancement-Mode Vertical DMOS Power FETs
7	VP0210N3	Supertex Inc	P-Channel Enhancement-Mode Vertical DMOS Power FETs
8	VP0216N2	Supertex Inc	P-Channel Enhancement-Mode Vertical DMOS Power FETs
9	VP0216N3	Supertex Inc	P-Channel Enhancement-Mode Vertical DMOS Power FETs
10	VP0220N2	Supertex Inc	P-Channel Enhancement-Mode Vertical DMOS Power FETs
11	VP0550	Supertex Inc	P-Channel Vertical DMOS FET ► ► Free from secondary breakdown ► ► Low power drive requirement ► ► Ease of paralleling ► ► Low CISS and fast switching speeds ► ► Excellent thermal stability ► ► Integral source-drain diode ► ► High input impedance and high gain Applications ► ► Motor con
12	VP0104N6	Supertex	P-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array o 4 independent channels o 4 electrically isolated die o Commercial and Military versions available o Freedom from secondary breakdown o Low power drive requirement o Low C1SS and fast switching speeds o High input impedance and high gain Application
13	VP03D	Supertex	P-Channel Enhancement-Mode Vertical DMOS FETs o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low C1SS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Chan
14	VP03E	Supertex	P-Channel Enhancement-Mode Vertical DMOS FETs o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low C1SS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Chan
15	VP05D	Supertex	P-Channel Enhancement-Mode Vertical DMOS FETs o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Chan
16	VP06D	Supertex	P-Channel Enhancement-Mode Vertical DMOS FETs o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Chan
17	VP06E	Supertex	P-Channel Enhancement-Mode Vertical DMOS FETs o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Chan
18	VP0204N7	Supertex Inc	P-Channel Enhancement-Mode Vertical DMOS Power FETs o 4 independent channels o 4 electrically isolated die o Commercial and Military versions available o Freedom from secondary breakdown o Low power drive requirement o Low C,SS and fast switching speeds o High input impedance and high gain Applicatio
19	VP0206N6	Supertex Inc	P-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array o 4 independent channels o 4 electrically isolated die o Commercial and Military versions available o Freedom from secondary breakdown o Low power drive requirement o Low C,SS and fast switching speeds o High input impedance and high gain Applicatio
20	VP0206N7	Supertex Inc	P-Channel Enhancement-Mode Vertical DMOS Power FETs