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Supertex |
P-Channel Enhancement-Mode Vertical DMOS Power FETs D Low threshold D High input impedance D Low input capacitance D Fast switching speeds D Low on resistance D Freedom from secondary breakdown D Low input and output leakage D Complementary N- and P-channel devices Advanced DMOS Technology These enha |
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Supertex Inc |
P-Channel Enhancement-Mode Vertical DMOS FETs ► ► Low threshold (-2.4V max.) ► ► High input impedance ► ► Low input capacitance (85pF typical) ► ► Fast switching speeds ► ► Low on-resistance ► ► Free from secondary breakdown ► ► Low input and output leakage Applications ► ► Logic level interfaces - idea |
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Supertex Inc |
P-Channel Enhancement-Mode Vertical DMOS FETs |
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Supertex Inc |
P-Channel Enhancement-Mode Vertical DMOS FETs ► ► Low threshold (-2.4V max.) ► ► High input impedance ► ► Low input capacitance (80pF typ.) ► ► Fast switching speeds ► ► Low on-resistance ► ► Free from secondary breakdown ► ► Low input and output leakage Applications ► ► Logic level interfaces – ideal f |
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Supertex |
P-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array D 4 independent channels D 4 electrically isolated die D Commercial and Military versions available D Freedom from secondary breakdown D Low power drive requirement D Low CISS and fast switching speeds D High input impedance and high gain Application |
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Supertex |
P-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array D 4 independent channels D 4 electrically isolated die D Commercial and Military versions available D Freedom from secondary breakdown D Low power drive requirement D Low CISS and fast switching speeds D High input impedance and high gain Application |
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Supertex |
P-Channel MOSFET |
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Supertex |
P-Channel Enhancement-Mode Vertical CMOS Power FETs s Low threshold — -2.4 V max s High input impedance s Low input capacitance — 85pF typical s Fast switching speeds s Low on resistance s Free from secondary breakdown s Low input and output leakage s Complementary N- and P-channel devices Application |
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Supertex |
P-Channel Enhancement-Mode Vertical DMOS FETs Low threshold — 2.4V max. High input impedance Low input capacitance Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices Applications Logic level interfaces – ide |
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Supertex |
P-Channel Enhancement-Mode Vertical DMOS Power FETs o Low threshold o High input impedance o Low input capacitance o Fast switching speeds o Low on resistance o Freedom from secondary breakdown o Low input and output leakage o Complementary N- and P-channel devices Advanced DMOS Technology These enha |
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Supertex Inc |
P-Channel Enhancement-Mode Vertical DMOS FETs ► ► Low threshold (-2.4V max.) ► ► High input impedance ► ► Low input capacitance (95pF typical) ► ► Fast switching speeds ► ► Low on-resistance ► ► Free from secondary breakdown ► ► Low input and output leakage Applications ► ► Logic level interfaces - idea |
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Supertex Inc |
P-Channel Enhancement-Mode Vertical DMOS FETs ► ► High input impedance and high gain ► ► Low power drive requirement ► ► Ease of paralleling ► ► Low CISS and fast switching speeds ► ► Excellent thermal stability ► ► Integral source-drain diode ► ► Free from secondary breakdown Applications ► ► Logic lev |
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Supertex Inc |
P-Channel Enhancement-Mode Vertical DMOS FETs |
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Supertex Inc |
P-Channel Enhancement-Mode Vertical DMOS FETs |
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Supertex |
P-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array o 4 independent channels o 4 electrically isolated die o Commercial and Military versions available o Freedom from secondary breakdown o Low power drive requirement o Low Crss and fast switching speeds o High input impedance and high gain Application |
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Supertex |
P-Channel Enhancement-Mode Vertical CMOS Power FETs o Low threshold o High input impedance o Low input capacitance o Fast switching speeds o Low on resistance o Freedom from secondary breakdown o Low input and output leakage o Complementary N- and P-channel devices Advanced CMOS Technology These enha |
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Supertex |
P-Channel Enhancement-Mode Vertical CMOS Power FETs 0 Low threshold 0 High input impedance 0 Low input capacitance 0 Fast switching speeds 0 Low on resistance 0 Freedom from secondary breakdown 0 Low input and output leakage VGS(th) (max) -2.4V -2.4V TO-39 TP0602N2 TP0604N2 Order Number I Package |
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Supertex |
P-Channel Enhancement-Mode Vertical DMOS FETs s Low threshold — -2.4V max s High input impedance s Low input capacitance — 80pF typical s Fast switching speeds s Low on resistance s Free from secondary breakdown s Low input and output leakage s Complementary N- and P-channel devices Applications |
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Supertex |
P-Channel Enhancement-Mode Vertical DMOS Power FETs o Low threshold o High input impedance o Low input capacitance o Fast switching speeds o Low on resistance o Freedom from secondary breakdown o Low input and output leakage TO ·92 TP0606N3 TP0610N3 Order Number I Package TO ·220 Quad P ·DIP TP0606NS |
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Supertex |
P-Channel Enhancement-Mode Vertical DMOS FETs Low threshold — 2.4V max. High input impedance Low input capacitance Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices Applications Logic level interfaces – ide |
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Desde 2024. D4U Semiconductor.
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