No. | parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
|
|
Supertex |
N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array D 4 independent channels D 4 electrically isolated die D Commercial and Military versions available D Freedom from secondary breakdown D Low power drive requirement D Low C,ss and fast switching speeds D High input impedance and high gain Application |
|
|
|
Supertex |
N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array o 4 independent channels o 4 electrically isolated die o Commercial and Military versions available o Freedom from secondary breakdown o Low power drive requirement o Low C,ss and fast switching speeds o High input impedance and high gain Applicatio |
|
|
|
Supertex |
N-Channel Enhancement-Mode Vertical DMOS Power FETs ■ Low threshold —1.5V max. ■ High input impedance ■ Low input capacitance — 45pF typical ■ Fast switching speeds ■ Low on resistance ■ Free from secondary breakdown ■ Low input and output leakage ■ Complementary N- and P-channel devices Applications |
|
|
|
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs ► Low threshold (1.6V max.) ► High input impedance ► Low input capacitance (110pF typical) ► Fast switching speeds ► Low on-resistance ► Free from secondary breakdown ► Low input and output leakage ► Complementary N- and P-channel devices Application |
|
|
|
Supertex |
N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array D 4 independent channels D 4 electrically isolated die D Commercial and Military versions available D Freedom from secondary breakdown D Low power drive requirement D Low C,ss and fast switching speeds D High input impedance and high gain Application |
|
|
|
Supertex |
N-Channel Enhancement-Mode Vertical DMOS Power FETs 0 Low threshold 0 High input impedance 0 Low input capacitance 0 Fast switching speeds 0 Low on resistance 0 Freedom from secondary breakdown 0 Low input and output leakage 0 Complementary N- and P-channel devices Advanced DMOS Technology These enha |
|
|
|
Supertex |
N-Channel Enhancement-Mode Vertical DMOS Power FETs Low threshold — 1.6V max. High input impedance Low input capacitance — 140pF typical Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices Applications Logic level in |
|
|
|
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs ► ► Low threshold - 2.0V max. ► ► High input impedance ► ► Low input capacitance - 100pF typical ► ► Fast switching speeds ► ► Low on-resistance ► ► Free from secondary breakdown ► ► Low input and output leakage Applications ► ► Logic level interfaces – idea |
|
|
|
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs ► ► Low threshold - 2.0V max. ► ► High input impedance ► ► Low input capacitance - 100pF typical ► ► Fast switching speeds ► ► Low on-resistance ► ► Free from secondary breakdown ► ► Low input and output leakage Applications ► ► Logic level interfaces – idea |
|
|
|
Supertex |
N-Channel Enhancement-Mode Vertical DMOS Power FETs D Low threshold D High input impedance D Low input capacitance D Fast switching speeds D Low on resistance D Freedom from secondary breakdown D Low input and output leakage Advanced DMOS Technology These enhancement-mode (normally-off) power transis |
|
|
|
Supertex |
N-Channel Enhancement-Mode Vertical DMOS Power FETs Low threshold —1.6V max. High input impedance Low input capacitance Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices Applications Logic level interfaces – ideal |
|
|
|
Supertex |
N-Channel Enhancement-Mode Vertical DMOS Power FETs ■ Low threshold —1.5V max. ■ High input impedance ■ Low input capacitance — 45pF typical ■ Fast switching speeds ■ Low on resistance ■ Free from secondary breakdown ■ Low input and output leakage ■ Complementary N- and P-channel devices Applications |
|
|
|
Supertex |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
|
|
|
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs ► ► Low threshold (1.6V max.) ► ► High input impedance ► ► Low input capacitance ► ► Fast switching speeds ► ► Low on-resistance ► ► Free from secondary breakdown ► ► Low input and output leakage Applications ► ► Logic level interfaces – ideal for TTL and CM |
|
|
|
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs ► ► Low threshold - 2.0V max. ► ► High input impedance ► ► Low input capacitance - 50pF typical ► ► Fast switching speeds ► ► Low on-resistance ► ► Free from secondary breakdown ► ► Low input and output leakage Applications ► ► Logic level interfaces – ideal |
|
|
|
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs ► ► Low threshold - 2.0V max. ► ► High input impedance ► ► Low input capacitance - 50pF typical ► ► Fast switching speeds ► ► Low on-resistance ► ► Free from secondary breakdown ► ► Low input and output leakage Applications ► ► Logic level interfaces – ideal |
|
|
|
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs ► ► Low threshold (1.6V max.) ► ► High input impedance ► ► Low input capacitance (140pF typical) ► ► Fast switching speeds ► ► Low on-resistance ► ► Free from secondary breakdown ► ► Low input and output leakage Applications ► ► Logic level interfaces - idea |
|
|
|
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs ► ► Low threshold - 1.6V max. ► ► High input impedance ► ► Low input capacitance - 130pF typical ► ► Fast switching speeds ► ► Low on-resistance guaranteed at VGS = 2, 3, and 5V ► ► Free from secondary breakdown ► ► Low input and output leakage Applications |
|
|
|
Supertex |
N-Channel Enhancement-Mode Vertical DMOS Power FETs o Low threshold o High input impedance o Low input capacitance o Fast switching speeds o Low on resistance o Freedom from secondary breakdown o Low input and output leakage o Complementary N- and P-channel devices Applications 0 Logic level interface |
|
|
|
Supertex |
N-Channel Enhancement-Mode Vertical DMOS Power FETs 0 Low threshold 0 High input impedance 0 Low input capacitance 0 Fast switching speeds 0 Low on resistance 0 Freedom from secondary breakdown 0 Low input and output leakage 0 Complementary N- and P-channel devices TO ·39 Order Number I Package TO ·92 |
|