No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Supertex Inc |
N-Channel MOSFET ► ► Free from secondary breakdown ► ► Low power drive requirement ► ► Ease of paralleling ► ► Low CISS and fast switching speeds ► ► Excellent thermal stability ► ► Integral source-drain diode ► ► High input impedance and high gain Applications ► ► Motor con |
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Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS Power FETs o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low Crss and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Chan |
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Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
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Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel |
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Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel |
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Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
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Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
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Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
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Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
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Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
|
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Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
|
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Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
|
|
|
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
|
|
|
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS Power FETs o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low Crss and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Chan |
|
|
|
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
|
|
|
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
|
|
|
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
|
|
|
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS Power FETs o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low Crss and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Chan |
|
|
|
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS Power FETs o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low Crss and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Chan |
|
|
|
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS Power FETs o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low Crss and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Chan |
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