| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Supertex Inc |
P-Channel Enhancement-Mode Vertical DMOS FETs ► ► Low threshold (-2.4V max.) ► ► High input impedance ► ► Low input capacitance (85pF typical) ► ► Fast switching speeds ► ► Low on-resistance ► ► Free from secondary breakdown ► ► Low input and output leakage Applications ► ► Logic level interfaces - idea |
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Supertex Inc |
P-Channel Enhancement-Mode Vertical DMOS FETs |
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Supertex Inc |
P-Channel Enhancement-Mode Vertical DMOS FETs ► ► Low threshold (-2.4V max.) ► ► High input impedance ► ► Low input capacitance (80pF typ.) ► ► Fast switching speeds ► ► Low on-resistance ► ► Free from secondary breakdown ► ► Low input and output leakage Applications ► ► Logic level interfaces – ideal f |
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Supertex Inc |
P-Channel Enhancement-Mode Vertical DMOS FETs ► ► Low threshold (-2.4V max.) ► ► High input impedance ► ► Low input capacitance (95pF typical) ► ► Fast switching speeds ► ► Low on-resistance ► ► Free from secondary breakdown ► ► Low input and output leakage Applications ► ► Logic level interfaces - idea |
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Supertex Inc |
P-Channel Enhancement-Mode Vertical DMOS FETs ► ► High input impedance and high gain ► ► Low power drive requirement ► ► Ease of paralleling ► ► Low CISS and fast switching speeds ► ► Excellent thermal stability ► ► Integral source-drain diode ► ► Free from secondary breakdown Applications ► ► Logic lev |
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Supertex Inc |
P-Channel Enhancement-Mode Vertical DMOS FETs |
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Supertex Inc |
P-Channel Enhancement-Mode Vertical DMOS FETs |
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Desde 2024. D4U Semiconductor.
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