No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs ► Low threshold (1.6V max.) ► High input impedance ► Low input capacitance (110pF typical) ► Fast switching speeds ► Low on-resistance ► Free from secondary breakdown ► Low input and output leakage ► Complementary N- and P-channel devices Application |
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Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs ► ► Low threshold - 2.0V max. ► ► High input impedance ► ► Low input capacitance - 100pF typical ► ► Fast switching speeds ► ► Low on-resistance ► ► Free from secondary breakdown ► ► Low input and output leakage Applications ► ► Logic level interfaces – idea |
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Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs ► ► Low threshold - 2.0V max. ► ► High input impedance ► ► Low input capacitance - 100pF typical ► ► Fast switching speeds ► ► Low on-resistance ► ► Free from secondary breakdown ► ► Low input and output leakage Applications ► ► Logic level interfaces – idea |
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Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs ► ► Low threshold (1.6V max.) ► ► High input impedance ► ► Low input capacitance ► ► Fast switching speeds ► ► Low on-resistance ► ► Free from secondary breakdown ► ► Low input and output leakage Applications ► ► Logic level interfaces – ideal for TTL and CM |
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Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs ► ► Low threshold - 2.0V max. ► ► High input impedance ► ► Low input capacitance - 50pF typical ► ► Fast switching speeds ► ► Low on-resistance ► ► Free from secondary breakdown ► ► Low input and output leakage Applications ► ► Logic level interfaces – ideal |
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Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs ► ► Low threshold - 2.0V max. ► ► High input impedance ► ► Low input capacitance - 50pF typical ► ► Fast switching speeds ► ► Low on-resistance ► ► Free from secondary breakdown ► ► Low input and output leakage Applications ► ► Logic level interfaces – ideal |
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Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs ► ► Low threshold (1.6V max.) ► ► High input impedance ► ► Low input capacitance (140pF typical) ► ► Fast switching speeds ► ► Low on-resistance ► ► Free from secondary breakdown ► ► Low input and output leakage Applications ► ► Logic level interfaces - idea |
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Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs ► ► Low threshold - 1.6V max. ► ► High input impedance ► ► Low input capacitance - 130pF typical ► ► Fast switching speeds ► ► Low on-resistance guaranteed at VGS = 2, 3, and 5V ► ► Free from secondary breakdown ► ► Low input and output leakage Applications |
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