| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Super Semiconductor |
600V N-Channel MOSFET • 650V @TJ = 150°C • Typ. RDS(on) = 0.16 • Ultra Low Gate Charge (typ. Qg = 70nC) • 100% avalanche tested D GDS TO-220 GD S TO-220F G S Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Dr |
|
Desde 2024. D4U Semiconductor.
|