| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Sony Corporation |
CXK1011P/M |
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Sony Corporation |
CXK1011P/M |
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Sony Corporation |
131072-word x 8-bit High Speed CMOS Static RAM • Fast access time: CXK581000ATM/AYM/AM/AP (Access time) -55LL/55SL 55ns (Max.) -70LL/70SL 70ns (Max.) -10LL/10SL 100ns (Max.) • Low standby current: CXK581000ATM/AYM/AM/AP -55LL/70LL/10LL 20µA (Max.) -55SL/70SL/10SL 12µA (Max.) • Low data retention |
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Sony Corporation |
131072-word x 8-bit High Speed CMOS Static RAM • Fast access time: CXK581000ATM/AYM/AM/AP (Access time) -55LL/55SL 55ns (Max.) -70LL/70SL 70ns (Max.) -10LL/10SL 100ns (Max.) • Low standby current: CXK581000ATM/AYM/AM/AP -55LL/70LL/10LL 20µA (Max.) -55SL/70SL/10SL 12µA (Max.) • Low data retention |
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Sony Corporation |
32768-WORD X 8-BIT HIGH SPEED CMOS STATIC RAM |
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Sony Corporation |
131/072-word X 9-bit High Speed CMOS Static RAM • Fast access time CXK591000TM/YM/M (Access time) -55LL 55ns (Max.) -70LL 70ns (Max.) -10LL 100ns (Max.) • Low standby current CXK591000TM/YM/M -55LL/70LL/10LL 24µA (Max.) • Low data retention current CXK591000TM/YM/M -55LL/70LL/10LL 14µA (Max.) • Si |
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Sony Corporation |
32768-word X 8-bit High Speed CMOS Static RAM • Single +3.3V supply: 3.3V ±0.3V • Directly LVTTL compatible: All inputs and outputs • Fast access time: (Access time) CXK5V8257BTM/BYM/BM -70LL 70ns (Max.) -10LL 100ns (Max.) • Low standby current: CXK5V8257BTM/BYM/BM -70LL/10LL 3.5µA (Max.) • Low |
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Sony Corporation |
8192-WORD X 8-BIT HIGH SPEED CMOS STATIC RAM |
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Sony Corporation |
131072-word x 8-bit HIGH SPEED COMS STATIC RAM |
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Sony Corporation |
1024-BIT (128WORD X 8 BIT) NON-VOLATILE MEMORY |
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Sony Corporation |
2048-WORD X 8 BIT HIGH SPEED CMOS STATIC RAM |
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Sony Corporation |
262144-word X 8-bit High Speed CMOS Static RAM • Fast access time (Access time) -85LL 85ns (Max.) -10LL 100ns (Max.) • Low standby current 40µA (Max.) • Low data retention current 24µA (Max.) • Single +5V supply: 4.5V to 5.5V. • Low voltage date retention : 2.0V (Min.) • Broad package line-up CXK |
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Sony Corporation |
262144-word X 8-bit High Speed CMOS Static RAM • Fast access time (Access time) -85LL 85ns (Max.) -10LL 100ns (Max.) • Low standby current 40µA (Max.) • Low data retention current 24µA (Max.) • Single +5V supply: 4.5V to 5.5V. • Low voltage date retention : 2.0V (Min.) • Broad package line-up CXK |
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Sony Corporation |
32768-WORD X 8-BIT HIGH SPEED CMOS STATIC RAM |
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Sony Corporation |
131072-word x 8-bit High Speed CMOS Static RAM • Extended operating temperature range: –25 to +85°C • Wide supply voltage range operation: 2.7 to 3.6V • Fast access time: (Access time) 3.0V operation -10LLX 100ns (Max.) -12LLX 120ns (Max.) 3.3V operation -10LLX 85ns (Max.) -12LLX 100ns (Max.) • L |
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Sony Corporation |
32768-word X 8-bit High Speed CMOS Static RAM • Extended operating temperature range: –25 to +85°C • Wide supply voltage range operation: 2.7 to 3.6V • Fast access time: (Access time) 3.0V operation -10LLX 100ns (Max.) -12LLX 120ns (Max.) 3.3V operation -10LLX 85ns (Max.) -12LLX 100ns (Max.) • L |
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Sony Corporation |
32768-word X 8-bit High Speed CMOS Static RAM • Extended operating temperature range: –25 to +85°C • Wide supply voltage range operation: 2.7 to 3.6V • Fast access time: (Access time) 3.0V operation -10LLX 100ns (Max.) -12LLX 120ns (Max.) 3.3V operation -10LLX 85ns (Max.) -12LLX 100ns (Max.) • L |
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Sony Corporation |
65536-word X 8-bit High Speed CMOS Static RAM • Extended operating temperature range: –25 to +85°C • Wide supply voltage range operation: 2.7 to 3.6V • Fast access time: (Access time) 3.0V operation CXK5T8512TM/TN-10LLX 100ns (Max.) CXK5T8512TM/TN-12LLX 120ns (Max.) 3.3V operation CXK5T8512TM/TN |
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Sony Corporation |
131072-word x 8-bit High Speed CMOS Static RAM • Fast access time: CXK581000ATM/AYM/AM/AP (Access time) -55LL/55SL 55ns (Max.) -70LL/70SL 70ns (Max.) -10LL/10SL 100ns (Max.) • Low standby current: CXK581000ATM/AYM/AM/AP -55LL/70LL/10LL 20µA (Max.) -55SL/70SL/10SL 12µA (Max.) • Low data retention |
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Sony Corporation |
131072-word x 8-bit High Speed CMOS Static RAM • Fast access time: CXK581000ATM/AYM/AM/AP (Access time) -55LL/55SL 55ns (Max.) -70LL/70SL 70ns (Max.) -10LL/10SL 100ns (Max.) • Low standby current: CXK581000ATM/AYM/AM/AP -55LL/70LL/10LL 20µA (Max.) -55SL/70SL/10SL 12µA (Max.) • Low data retention |
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Desde 2024. D4U Semiconductor.
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