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Solid States Devices |
50 AMP 600 VOLTS FAST POWER IGBT taSheet4U.com SYMBOL VCEO VALUE 600 70 42 40 140 300 E20 -65 to +200 200 0.8 0.7 UNITS Volts Amps @ TC = 25oC @ TC = 90oC @ TC = 25oC IC IO IC(pk) IIFSM VGE TJ, TSTG PD Amps Volts o Gate Emitter Voltage Operating and Storage Temperature Total |
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Solid States Devices |
200 AMP N-CHANNEL IGBT • • • • • • • Outstanding current capability Low on-state conductive losses Very simple gate drive design Improved SOA characterization Low input capacitance High reverse voltage rating available TX, TXV, S-Level screening available SYMBOL VCES VGES |
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Desde 2024. D4U Semiconductor.
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