No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Solid States Devices |
(SDR1304 - SDR1308) 3 AMP ULTRA FAST RECOVERY RECTIFIER |
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Solid States Devices |
HYPER FAST RECOVERY RECTIFIER • • • • • • Hyper Fast Reverse Recovery Time 4.5 - 6 ns Max Hermetically Sealed Planar Passivated Chip For High Efficiency Applications Available in Axial, Subminiature Round Tab & Subminiature Square Tab Versions 2/ TX, TXV, and S-Level Screening A |
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Solid States Devices |
(SDR66xxJ) 40A 35nsec 300-600 V Hyper Fast Centertap Rectifier • • • • • • • • • • Hyper Fast Recovery: 35nsec Maximum 3/ High Surge Rating Low Reverse Leakage Current Low Junction Capacitance Isolated Hermetically Sealed Package Gold Eutectic Die Attach Ultrasonic Aluminum Wire Bonds Availabl e in Common Anode |
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Solid States Devices |
(SDR1304 - SDR1308) 3 AMP ULTRA FAST RECOVERY RECTIFIER |
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Solid States Devices |
(SDR1304 - SDR1308) 3 AMP ULTRA FAST RECOVERY RECTIFIER |
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Solid States Devices |
(SDR1183 - SDR1190) 35 Amp 50-600 Volt 5 nsec STANDARD RECOVERY RECTIFIER • • • • • • • • • • Low Reverse Leakage Current Single Chip Construction PIV to 600V Hermetically Sealed Low Thermal Resistance Higher Voltage Devices Up to 1400V Available* Fast and Ultra Fast Recovery Versions Available* For Reverse Polarity Add S |
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Solid States Devices |
(SDR66xxJ) 40A 35nsec 300-600 V Hyper Fast Centertap Rectifier • • • • • • • • • • Hyper Fast Recovery: 35nsec Maximum 3/ High Surge Rating Low Reverse Leakage Current Low Junction Capacitance Isolated Hermetically Sealed Package Gold Eutectic Die Attach Ultrasonic Aluminum Wire Bonds Availabl e in Common Anode |
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Solid States Devices |
(SDR66xxJ) 40A 35nsec 300-600 V Hyper Fast Centertap Rectifier • • • • • • • • • • Hyper Fast Recovery: 35nsec Maximum 3/ High Surge Rating Low Reverse Leakage Current Low Junction Capacitance Isolated Hermetically Sealed Package Gold Eutectic Die Attach Ultrasonic Aluminum Wire Bonds Availabl e in Common Anode |
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Solid States Devices |
(SDR1304 - SDR1308) 3 AMP ULTRA FAST RECOVERY RECTIFIER |
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Solid States Devices |
(SDR1304 - SDR1308) 3 AMP ULTRA FAST RECOVERY RECTIFIER |
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Solid States Devices |
(SDR1183 - SDR1190) 35 Amp 50-600 Volt 5 nsec STANDARD RECOVERY RECTIFIER • • • • • • • • • • Low Reverse Leakage Current Single Chip Construction PIV to 600V Hermetically Sealed Low Thermal Resistance Higher Voltage Devices Up to 1400V Available* Fast and Ultra Fast Recovery Versions Available* For Reverse Polarity Add S |
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Solid States Devices |
(SDR1183 - SDR1190) 35 Amp 50-600 Volt 5 nsec STANDARD RECOVERY RECTIFIER • • • • • • • • • • Low Reverse Leakage Current Single Chip Construction PIV to 600V Hermetically Sealed Low Thermal Resistance Higher Voltage Devices Up to 1400V Available* Fast and Ultra Fast Recovery Versions Available* For Reverse Polarity Add S |
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Solid States Devices |
(SDR1183 - SDR1190) 35 Amp 50-600 Volt 5 nsec STANDARD RECOVERY RECTIFIER • • • • • • • • • • Low Reverse Leakage Current Single Chip Construction PIV to 600V Hermetically Sealed Low Thermal Resistance Higher Voltage Devices Up to 1400V Available* Fast and Ultra Fast Recovery Versions Available* For Reverse Polarity Add S |
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Solid States Devices |
(SDR1183 - SDR1190) 35 Amp 50-600 Volt 5 nsec STANDARD RECOVERY RECTIFIER • • • • • • • • • • Low Reverse Leakage Current Single Chip Construction PIV to 600V Hermetically Sealed Low Thermal Resistance Higher Voltage Devices Up to 1400V Available* Fast and Ultra Fast Recovery Versions Available* For Reverse Polarity Add S |
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Solid States Devices |
(SDR1183 - SDR1190) 35 Amp 50-600 Volt 5 nsec STANDARD RECOVERY RECTIFIER • • • • • • • • • • Low Reverse Leakage Current Single Chip Construction PIV to 600V Hermetically Sealed Low Thermal Resistance Higher Voltage Devices Up to 1400V Available* Fast and Ultra Fast Recovery Versions Available* For Reverse Polarity Add S |
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Solid States Devices |
(SDR6304 - SDR6307) Ultra Fast Recovery Rectifier • • • • • • • • Fast Recovery: 50nsec Maximum Low Forward Voltage Drop Low Reverse Leakage Current Single Chip Construction Hermetically Sealed For High Efficiency Applications Replacement for 1N6304, 1N6305, and 1N6306 2/ TX, TXV, and S-Level Scree |
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Solid States Devices |
(SDR6304 - SDR6307) Ultra Fast Recovery Rectifier • • • • • • • • Fast Recovery: 50nsec Maximum Low Forward Voltage Drop Low Reverse Leakage Current Single Chip Construction Hermetically Sealed For High Efficiency Applications Replacement for 1N6304, 1N6305, and 1N6306 2/ TX, TXV, and S-Level Scree |
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Solid States Devices |
(SDR66xxJ) 40A 35nsec 300-600 V Hyper Fast Centertap Rectifier • • • • • • • • • • Hyper Fast Recovery: 35nsec Maximum 3/ High Surge Rating Low Reverse Leakage Current Low Junction Capacitance Isolated Hermetically Sealed Package Gold Eutectic Die Attach Ultrasonic Aluminum Wire Bonds Availabl e in Common Anode |
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Solid States Devices |
(SDR66xxJ) 40A 35nsec 300-600 V Hyper Fast Centertap Rectifier • • • • • • • • • • Hyper Fast Recovery: 35nsec Maximum 3/ High Surge Rating Low Reverse Leakage Current Low Junction Capacitance Isolated Hermetically Sealed Package Gold Eutectic Die Attach Ultrasonic Aluminum Wire Bonds Availabl e in Common Anode |
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Solid States Devices |
(SDR66xxJ) 40A 35nsec 300-600 V Hyper Fast Centertap Rectifier • • • • • • • • • • Hyper Fast Recovery: 35nsec Maximum 3/ High Surge Rating Low Reverse Leakage Current Low Junction Capacitance Isolated Hermetically Sealed Package Gold Eutectic Die Attach Ultrasonic Aluminum Wire Bonds Availabl e in Common Anode |
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