Sirenza Microdevices SUF Hoja de datos

No.	parte #	Fabricante	Descripción
1	SUF-2000	Sirenza Microdevices	Cascadable pHEMT MMIC Amplifier • • • • • • • • Broadband Performance High Gain = 12.0 dB @ 6 GHz P1dB = 16 dBm @ 6 GHz Low-noise, Efficient Gain Block 3.3V Operation, No Dropping Resistor Low Gain Variation vs. Temperature Patented Thermal Design Patented Self-Bias Darlington Circ
2	SUF-1000	Sirenza Microdevices	Cascadable pHEMT MMIC Amplifier • • • • • • • Broadband Flat Gain = 10 dB P1dB = 14 dBm Direct-coupled topology Efficient single-supply operation: 5V, 45mA Low Gain Variation vs. Temperature Compact die size (0.75 x 0.88 mm2) Patented Self-Bias Darlington Applications • • • • • Ul
3	SUF-3000	Sirenza Microdevices	Cascadable pHEMT MMIC Amplifier • • • • • • • • Broadband Performance Gain = 10 dB @ 6 GHz P1dB = 15.5 dBm @ 6 GHz Low-noise, Efficient Gain Block 5V Operation, No Dropping Resistor Low Gain Variation vs. Temperature Patented Thermal Design Patented Self-Bias Darlington Circuit Ap
4	SUF-5000	Sirenza Microdevices	Cascadable pHEMT MMIC Amplifier • • • • • • • • Return Loss (dB) Gain & Return Loss vs. Frequency (GSG Probe Data) 24 22 20 18 16 14 12 0 1 2 Frequency (Ghz) 3 4 GAIN ORL IRL 0 -5 -10 -15 -20 -25 -30 Broadband Performance High Gain = 19.0 dB @ 2 GHz P1dB = 22 dBm @ 2 GHz Low-nois
5	SUF-4000	Sirenza Microdevices	Cascadable pHEMT MMIC Amplifier • • • • • • • • Broadband Performance High Gain = 17.0 dB @ 2 GHz P1dB = 21 dBm @ 2 GHz Low-noise, Efficient Gain Block 5V Operation, No Dropping Resistor Low Gain Variation vs. Temperature Patented Thermal Design Patented Self-Bias Darlington Topolo