Sirenza Microdevices SLD Hoja de datos

No.	parte #	Fabricante	Descripción
1	SLD-1083CZ	Sirenza Microdevices	4 Watt Discrete LDMOS FET • • • • • • • • • • • 4 Watt Output P1dB Single Polarity Supply Voltage High Gain: 18 dB at 915 MHz High Efficiency: 43% at 3W CW XeMOS II LDMOS Integrated ESD Protection, Class 1B Applications Base Station PA driver Repeaters RFID Military Commun
2	SLD-3091FZ	Sirenza Microdevices	30 Watt Discrete LDMOS FET ESD Protection • • • • • • 30 Watt Output P1dB Single Polarity Supply Voltage High Gain: 18 dB at 915 MHz High Efficiency: 45% at 30W CW XeMOS II LDMOS Integrated ESD Protection, 1B Applications Case Flange = Ground Key RF Specifications Symbol F
3	SLD-2083CZ	Sirenza Microdevices	12 Watt Discrete LDMOS FET ESD Protection • • • • • • 12 Watt Output P1dB Single Polarity Supply Voltage High Gain: 18 dB at 915 MHz High Efficiency: 47% at 10W CW XeMOS II LDMOS Integrated ESD Protection, Class 1B Applications Case Flange = Ground RF Specifications Symbol
4	SLD-2000	Sirenza Microdevices	12 Watt Discrete LDMOS FET 12 Watt Output P1dB Single Polarity Operation 19dB Gain at 900 MHz XeMOS IITM LDMOS Integrated ESD Protection, Class 1B Aluminum Topside Metallization Gold Backside Metallization Gate Manifold Drain Manifold Source - Backside Contact RF Specificat
5	SLD-1026Z	Sirenza Microdevices	3 Watt Discrete LDMOS Device Plastic Surface Mount Package a RoHS/WEEE Compliant package with matte tin finish, designated by the ‘Z’ suffix. Pb RoHS Compliant & Green Package 3 Watt Discrete LDMOS Device Plastic Surface Mount Package Functional Schematic Diagram ESD Protection Proprietary SOF-26 Packag
6	SLD-1000	Sirenza Microdevices	4 Watt Discrete LDMOS FET 4 Watt Output P1dB Single Polarity Operation 19dB Gain at 900 MHz XeMOS IITM LDMOS Integrated ESD Protection, Class 1B Aluminum Topside Metallization Gold Backside Metallization Gate Manifold Drain Manifold Source - Backside Contact RF Specificati
7	SLD3091FZ	Sirenza Microdevices	30 Watt Discrete LDMOS FET ESD Protection • • • • • • 30 Watt Output P1dB Single Polarity Supply Voltage High Gain: 18 dB at 915 MHz High Efficiency: 45% at 30W CW XeMOS II LDMOS Integrated ESD Protection, 1B Applications Case Flange = Ground Key RF Specifications Symbol F