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Sirectifier Semiconductors |
SPT IGBT Modules s V mA V m V nF nH m ns ns ns ns mJ 2.5 1.4 13 V V m A uC mJ V V m A uC mJ K/W K/W K/W Nm Nm g td(on) tr td(off) tf Eon(Eoff) Inverse Diode under following conditions: VF = VEC IF = 100A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 25(125)oC rT Tj = 25(125) |
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Sirectifier Semiconductors |
NPT IGBT Modules 1.4(1.6) 11(15) 2.5(3.1) 6.5 1 0.5 0.35(0.5) 160 80 400 70 13(11) 2(1.8) 8 35(50) 5(14) 320 160 520 100 max. 6.5 0.3 1.6(1.8) 14(19) 3(3.7) 8.5 1.5 0.6 20 Units V mA V m V nF nH m ns ns ns ns mJ V V m A uC mJ V V m A uC mJ K/W K/W K/W K/W Nm Nm g t |
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Sirectifier Semiconductors |
SPT IGBT Modules 1) 2.35(2.55) 8.1 1.2 1.1 0.35(0.5) 80 40 460 65 10(9) 2(1.8) 2.5(2.3) 1.1 1.45(1.25) 9 13(11) 145 16.5 5.5 0.15 0.3 0.038 td(on) tr td(off) tf Eon(Eoff) Inverse Diode under following conditions: VF = VEC IF = 100A; VGE = 0V; Tj = 25(125)oC V(TO) Tj |
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Sirectifier Semiconductors |
NPT IGBT Modules 1.4(1.6) 5.5(7.5) 2.5(3.1) 18 2.5 1 0.35(0.5) 250 90 550 70 28(26) 2(1.8) 1.1 3 70(105) 10(26) 400 160 700 100 max. 6.5 0.3 1.6(1.8) 7(9.5) 3(3.7) 24 3.2 1.3 20 Units V mA V m V nF nH m ns ns ns ns mJ V V m A uC mJ V V m A uC mJ K/W K/W K/W K/W Nm N |
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Sirectifier Semiconductors |
NPT IGBT Modules mA V m V nF nH m ns ns ns ns mJ V V m A uC mJ V V m A uC mJ K/W K/W K/W K/W Nm Nm g td(on) tr td(off) tf Eon(Eoff) Inverse Diode under following conditions: VF = VEC IF = 75A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 125oC rT Tj = 125oC IRRM IF = 75A; Tj |
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Sirectifier Semiconductors |
SPT IGBT Modules 20) 1.9(2.1) 2.35(2.55) 6.2 0.74 0.71 0.75(1) 150 45 560 50 8.5(7.5) 2(1.8) 1.05 13 105 10.5 3.4 0.21 0.5 0.05 td(on) tr td(off) tf Eon(Eoff) Inverse Diode under following conditions: VF = VEC IF = 75A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 25(125)oC |
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Sirectifier Semiconductors |
SPT IGBT Modules (10) 1.9(2.1) 2.35(2.55) 13 2 2 0.35(0.5) 125 50 620 55 18(15) 2(1.8) 1.1 6 190 24 8 0.095 0.25 0.038 td(on) tr td(off) tf Eon(Eoff) Inverse Diode under following conditions: VF = VEC IF = 150A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 25(125)oC rT Tj = |
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Sirectifier Semiconductors |
SPT IGBT Modules ) 1.9(2.1) 2.35(2.55) 26 3 3 td(on) tr td(off) tf Eon(Eoff) Inverse Diode under following conditions: VF = VEC IF = 300A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 25(125)oC rT Tj = 25(125)oC IRRM IF = 300A; Tj = 125oC Qrr di/dt = 2400A/us Err VGE = V The |
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Sirectifier Semiconductors |
NPT IGBT Modules m V nF nH m ns ns ns ns mJ V V m A uC mJ V V m A uC mJ K/W K/W K/W K/W Nm Nm g td(on) tr td(off) tf Eon(Eoff) Inverse Diode under following conditions: VF = VEC IF = 75A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 125oC rT Tj = 125oC IRRM IF = 50A; Tj = 2 |
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Sirectifier Semiconductors |
SPT IGBT Modules 1.9(2.1) 2.35(2.55) 4.5 0.6 0.55 0.75(1) 90 55 400 40 5.7(4.7) 2(1.8) 1.1 18 80 8.5 3.1 0.3 0.6 0.05 td(on) tr td(off) tf Eon(Eoff) Inverse Diode under following conditions: VF = VEC IF = 50A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 25(125)oC rT Tj = 25 |
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Sirectifier Semiconductors |
NPT IGBT Modules its V mA V m V nF nH m ns ns ns ns mJ V V m A uC mJ V V m A uC mJ K/W K/W K/W K/W Nm Nm g td(on) tr td(off) tf Eon(Eoff) Inverse Diode under following conditions: VF = VEC IF = 150A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 125oC rT Tj = 125oC IRRM IF = |
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Sirectifier Semiconductors |
SPT IGBT Modules mA V m V nF nH m ns ns ns ns mJ 2.5 1.2 6.5 V V m A uC mJ V V m A uC mJ K/W K/W K/W Nm Nm g td(on) tr td(off) tf Eon(Eoff) Inverse Diode under following conditions: VF = VEC IF =200A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 25(125)oC rT Tj = 25(125)oC |
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Sirectifier Semiconductors |
NPT IGBT Modules .1) 3(3.7) 22 30 3.3 1.2 4 1.6 20 td(on) tr td(off) tf Eon(Eoff) Inverse Diode under following conditions: VF = VEC IF = 300A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 125oC rT Tj = 125oC IRRM IF = 300A; Tj = 25(125)oC Qrr di/dt = 2000A/us Err VGE = V Th |
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