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Sirectifier |
Discrete Triacs and LOGIC LEVEL(3 Quadrants) Symbol Test Conditions Quadrant BTA IGT (1) VGT VD = 12 V RL = 33 Ω I - II - III I - II - III VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C I - II - III IH (2) IL IT = 500 mA IG = 1.2 IGT I - III II dV/dt (2) VD = |
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Sirectifier Semiconductors |
Discrete Triacs 21 A A²s A/µs A W °C tp = 10 ms F = 120 Hz tp = 20 µs Tj = 125° C Tj = 125°C Tj = 125° C 50 4 1 - 40 to + 150 - 40 to + 125 s ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) SNUBBERLESS™ and LOGIC LEVEL(3 Quadrants) Symbol Te |
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Sirectifier |
Discrete Triacs ation Storage junction temperature range Operating junction temperature r ange tp = 10 ms tp = 20 µs Tj = 25°C Tj = 125°C Tj = 125° C VDRM/VRRM + 100 V A W °C 4 1 - 40 to + 150 - 40 to + 125 s ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless othe |
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Sirectifier |
Discrete Triacs and LOGIC LEVEL(3 Quadrants) Symbol Test Conditions Quadrant BTA IGT (1) VGT VD = 12 V RL = 33 Ω I - II - III I - II - III VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C I - II - III IH (2) IL IT = 500 mA IG = 1.2 IGT I - III II dV/dt (2) VD = |
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Sirectifier |
Discrete Triacs and LOGIC LEVEL(3 Quadrants) Symbol Test Conditions Quadrant BTA IGT (1) VGT VD = 12 V RL = 33 Ω I - II - III I - II - III VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C I - II - III IH (2) IL IT = 500 mA IG = 1.2 IGT I - III II dV/dt (2) VD = |
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Sirectifier Semiconductors |
Discrete Triacs ction temperature range Operating junction temperature r ange tp = 10 ms tp = 20 µs Tj = 25°C Tj = 125°C Tj = 125° C VDRM/VRRM + 100 V A W °C 8 1 - 40 to + 150 - 40 to + 125 ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Sym |
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Sirectifier |
Discrete Triacs ation Storage junction temperature range Operating junction temperature r ange tp = 10 ms tp = 20 µs Tj = 25°C Tj = 125°C Tj = 125° C VDRM/VRRM + 100 V A W °C 4 1 - 40 to + 150 - 40 to + 125 s ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless othe |
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Sirectifier |
Discrete Triacs and LOGIC LEVEL(3 Quadrants) Symbol Test Conditions Quadrant BTA IGT (1) VGT VD = 12 V RL = 33 Ω I - II - III I - II - III VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C I - II - III IH (2) IL IT = 500 mA IG = 1.2 IGT I - III II dV/dt (2) VD = |
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Sirectifier |
Discrete Triacs and LOGIC LEVEL(3 Quadrants) Symbol Test Conditions Quadrant BTA IGT (1) VGT VD = 12 V RL = 33 Ω I - II - III I - II - III VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C I - II - III IH (2) IL IT = 500 mA IG = 1.2 IGT I - III II dV/dt (2) VD = |
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Sirectifier |
Discrete Triacs and LOGIC LEVEL(3 Quadrants) Symbol Test Conditions Quadrant BTA IGT (1) VGT VD = 12 V RL = 33 Ω I - II - III I - II - III VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C I - II - III IH (2) IL IT = 500 mA IG = 1.2 IGT I - III II dV/dt (2) VD = |
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Sirectifier |
Discrete Triacs and LOGIC LEVEL(3 Quadrants) Symbol Test Conditions Quadrant BTA IGT (1) VGT VD = 12 V RL = 33 Ω I - II - III I - II - III VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C I - II - III IH (2) IL IT = 500 mA IG = 1.2 IGT I - III II dV/dt (2) VD = |
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Desde 2024. D4U Semiconductor.
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