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Sinopower |
P-Channel MOSFET • -40V/-78A RDS(ON)=8.4mΩ(max.)@VGS=-20V RDS(ON)=9.4mΩ(max.)@VGS=-10V RDS(ON)=15mΩ(max.)@VGS=-4.5V • 100% UIS + Rg Tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description GDS TO-220 D Applications • SMP |
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Sinopower |
N-Channel MOSFET · 30V/50A, RDS(ON)=8.4mW (max.) @ VGS=10V RDS(ON)=12.6mW (max.) @ VGS=4.5V · Reliable and Rugged · Lead Free and Green Devices Available (RoHS Compliant) ® N-Channel Enhancement Mode MOSFET Pin Description DDDD S S SG DFN5x6-8 D (5, 6) Pin 1 App |
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Sinopower |
N-Channel MOSFET • 30V/100A, RDS(ON)= 2mΩ (Max.) @ VGS=10V R= DS(ON) 3.2mΩ (Max.) @ V =4.5V GS • Reliable and Rugged • Lower Qg and Qgd for high-speed switching • Lower RDS(ON) to Minimize Conduction Losses • Lead Free and Green Devices Available (RoHS Comp |
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Sinopower |
N-Channel MOSFET • 30V/60A, RDS(ON)=5.7mΩ (Max.) @ VGS=10V RDS(ON)=7.6mΩ (Max.) @ VGS=4.5V Pin Description D D D D • • Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) S S S G Pin 1 DFN5x6-8 (5,6,7,8) DD DD Applications (4) G • Po |
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Sinopower |
N-Channel MOSFET · 30V/80A, RDS(ON)= 3mW (Max.) @ VGS=10V RDS(ON)= 5.1mW (Max.) @ VGS=4.5V · 100% UIS + Rg Tested · Reliable and Rugged · Lower Qg and Qgd for high-speed switching · Lower RDS(ON) to Minimize Conduction Losses · Lead Free and Green Devices Available ( |
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Sinopower |
P-Channel MOSFET • -40V/-36A, RDS(ON)= 17mΩ (max.) @ VGS=-10V RDS(ON)= 25mΩ (max.) @ VGS=-4.5V • 100% UIS + R Tested g • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management in LCD TV Inverter. Pin Des |
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Sinopower |
N-Channel MOSFET · 30V/70A, RDS(ON)= 3mW (max.) @ VGS=10V RDS(ON)= 4.3mW (max.) @ VGS=4.5V · Reliable and Rugged · Lead Free and Green Devices Available (RoHS Compliant) ® N-Channel Enhancement Mode MOSFET Pin Description DDDD S S SG DFN5x6-8 D (5, 6, 7, 8) Pin |
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Sinopower |
P-Channel MOSFET • -30V/-68A, RDS(ON) = 9mΩ(max.) @ VGS =-10V RDS(ON) = 15mΩ(max.) @ VGS =-4.5V • HBM ESD protection level pass 8KV • 100% UIS + R Tested g • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Note : The diode connect |
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Sinopower |
N-Channel MOSFET • 30V/50A, RDS(ON)= 7mΩ (max.) @ VGS=10V RDS(ON)= 9.6mΩ (max.) @ VGS=4.5V • Provide Excellent Qgd x Rds-on • 100% UIS + R Tested g • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) ® N-Channel Enhancement Mode MOS |
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Sinopower |
P-Channel MOSFET · -30V/-100A, RDS(ON) = 3.6mW(max.) @ VGS =-10V RDS(ON) = 6.8mW(max.) @ VGS =-4.5V · 100% UIS + Rg Tested · Reliable and Rugged · Lead Free and Green Devices Available (RoHS Compliant) · HBM ESD protection level pass 8KV Pin Description DDDD S S S |
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Sinopower |
N-channel MOSFET · 30V/13A, RDS(ON)= 9mW(max.) @ VGS= 10V RDS(ON)= 13.5mW(max.) @ VGS= 4.5V · Reliable and Rugged · Lead Free and Green Devices Available (RoHS Compliant) ® N-Channel Enhancement Mode MOSFET Pin Description DD DD S S S G Top View of SOP-8 ( 5,6,7,8 ) |
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Sinopower |
N-Channel MOSFET · 30V/17A, RDS(ON)= 4mW(max.) @ VGS= 10V RDS(ON)= 5.6mW(max.) @ VGS= 4.5V · Super High Dense Cell Design · Reliable and Rugged · Lead Free and Green Devices Available (RoHS Compliant) ® N-Channel Enhancement Mode MOSFET Pin Description DD DD S S S G |
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P-Channel MOSFET · -30V/-88A, RDS(ON)= 6.5mW (max.) @ VGS=-10V RDS(ON)= 11.5mW (max.) @ VGS=-4.5V · Reliable and Rugged · Lead Free and Green Devices Available (RoHS Compliant) · HBM ESD capability level of 2.6KV typical Note : The diode connected between the gate an |
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N-Channel MOSFET Pin Description · 30V/48A, RDS(ON)=6.8mW (Max.) @ VGS=10V RDS(ON)=11mW (Max.) @ VGS=4.5V · Lower Qg and Qgd for high-speed switching · Lower RDS(ON) to Minimize Conduction Losses · 100% UIS + Rg Tested · ESD protection · Reliable and Rugged · Lead |
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Sinopower |
P-Channel MOSFET · -30V/-42A, RDS(ON) = 12mW(max.) @ VGS =-10V RDS(ON) = 17mW(max.) @ VGS =-6V RDS(ON) = 21mW(max.) @ VGS =-4.5V · Reliable and Rugged · Lead Free and Green Devices Available (RoHS Compliant) ® P-Channel Enhancement Mode MOSFET Pin Description DDDD |
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Sinopower |
N-Channel MOSFET • 40V/80A RDS(ON)=2.2mΩ(max.)@VGS=10V RDS(ON)=3.1mΩ(max.)@VGS=4.5V • 100% UIS Tested • Reliable and Rugged • Lower Qg and Qgd for high-speed switching • Lower RDS(ON) to Minimize Conduction Losses • Lead Free and Green Devices Available (RoHS Complia |
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Sinopower |
N-Channel MOSFET · 30V/100A, RDS(ON)=1.6mW (Max.) @ VGS=10V RDS(ON)=2.5mW (Max.) @ VGS=4.5V · 100% UIS + Rg Tested · Reliable and Rugged · Lower Qg and Qgd for high-speed switching · Lower RDS(ON) to Minimize Conduction Losses · Lead Free and Green Devices Available |
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Sinopower |
N-Channel Enhancement Mode MOSFET · 40V/60A, RDS(ON)= 9mW (max.) @ VGS=10V RDS(ON)= 16mW (max.) @ VGS=4.5V · Reliable and Rugged · Lead Free and Green Devices Available (RoHS Compliant) ® N-Channel Enhancement Mode MOSFET Pin Description DDDD S S SG DFN5x6-8 (5,6,7,8) DD DD Pin 1 |
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N-Channel Enhancement Mode MOSFET · 40V/100A, RDS(ON)= 1.5mW (max.) @ VGS=10V RDS(ON)= 2.15mW (max.) @ VGS=4.5V · Reliable and Rugged · Lead Free and Green Devices Available (RoHS Compliant) · Lower Conduction Loss for Excellent Efficiency Pin Description DDDD S S SG DFN5x6-8 (5,6, |
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Sinopower |
P-Channel MOSFET • -40V/-74A, RDS(ON)= 8mΩ (max.) @ VGS=-20V R= DS(ON) 9.4mΩ (max.) @ V =-10V GS RDS(ON)= 15mΩ (max.) @ VGS=-4.5V • HBM ESD capability level of 8KV typical • 100% UIS + Rg Tested • Reliable and Rugged • Lead Free and Green Devices Available |
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Desde 2024. D4U Semiconductor.
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