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Silikron Semiconductor |
N-Channel enhancement mode power field effect transistors and Benefits TO-220 Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature SS |
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Silikron Semiconductor |
N-Channel enhancement mode power field effect transistors and Benefits TO-263-7L Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature |
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Silikron |
MOSFET and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature SSS |
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Silikron |
MOSFET and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature SSS |
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Silikron |
MOSFET and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature Des |
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Silikron Semiconductor |
N-Channel enhancement mode power field effect transistors and Benefits TO-247 Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature S |
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Silikron |
MOSFET and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature SSS |
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Silikron |
MOSFET Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature SSS4008J8L Pin A |
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Silikron |
MOSFET and Benefits Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and reverse body recovery 150℃ operating temperature Applications Consumer electronic power supply Motor control Synchronous |
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Silikron |
MOSFET and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature SSS |
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Silikron Semiconductor |
N-Channel enhancement mode power field effect transistors and Benefits TO-220 Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature SS |
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Silikron |
MOSFET and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature SSS |
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Silikron Semiconductor |
N-Channel enhancement mode power field effect transistors and Benefits TO-220 Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature SS |
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Desde 2024. D4U Semiconductor.
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