Siliconix VN0 Hoja de datos

No.	parte #	Fabricante	Descripción
1	VN0808M	Siliconix	N-Channel Enhancement-Mode MOS Transistors eter has been revised from previous datasheet VN0808L 156 VN0808M 125 UNITS °C/W 6-73 VN0808 SERIES ELECTRICAL CHARACTERISTICS1 PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS(th)
2	VN0808L	Siliconix	N-Channel Enhancement-Mode MOS Transistors eter has been revised from previous datasheet VN0808L 156 VN0808M 125 UNITS °C/W 6-73 VN0808 SERIES ELECTRICAL CHARACTERISTICS1 PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS(th)
3	VN0610L	Siliconix	N-Channel Enhancement-Mode MOS Transistors internal gate-source Zener diode VN10KM UNITS 125 °C/W 6-69 VN0610L, VN10KE, VN10KM ELECTRICAL CHARACTERISTICS1 PARAMETER SYMBOL. TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)OSS VGS(th) VGs=OV,10=100.l
4	VN0605T	Siliconix	N-Channel Enhancement-Mode MOS Transistor ce Breakdown Voltage Gate Thresho)d Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 3 Drain-Source On-Reslstance3 SYMBOL V(BR)oSS VGS(th) IGSS loss 10(ON) roS(ON) ~~~:~gnductance 3 gFS Common Source Output Conduct
5	VN0603T	Siliconix	N-Channel Enhancement-Mode MOS Transistors temperature 6-65 VN0603 SERIES ELECTRICAL CHARACTERISTICS1 PARAMETER SYMBOL TEST CONDITIONS ~ trrSinilciocrpoornatiexd LIMITS VN0603L VN0603T TYp2 MIN MAX MIN MAX UNIT STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)OSS
6	VN0300B	Siliconix	N-Channel Enhancement-Mode MOS Transistors ESISTANCE THERMAL RESISTANCE SYMBOL VN0300B Junction-to-Ambient RthJA 170 1Pulse width limited by maximum junction temperature 2Reference case temperature for all testing 3Absolute maximum ratings have been revised from previous datasheet VN03
7	VN0610LL	Vishay Siliconix	N-Channel MOSFET BENEFITS D Low On-Resistance: 2.5 W D Low Threshold: <2.1 V D Low Input Capacitance: 22 pF D Fast Switching Speed: 7 ns D Low Input and Output Leakage D Low Offset Voltage D Low-Voltage Operation D Easily Driven Without Buffering D High-Speed Circ
8	VN0300M	Siliconix	N-Channel Enhancement-Mode MOS Transistors
9	VN0603L	Siliconix	N-Channel Enhancement-Mode MOS Transistors temperature 6-65 VN0603 SERIES ELECTRICAL CHARACTERISTICS1 PARAMETER SYMBOL TEST CONDITIONS ~ trrSinilciocrpoornatiexd LIMITS VN0603L VN0603T TYp2 MIN MAX MIN MAX UNIT STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)OSS
10	VN0300LS	Vishay Siliconix	N-Channel MOSFETs D D D D D Low On-Resistance: 0.85 W Low Threshold: 1.4 V Low Input Capacitance: 38 pF Fast Switching Speed: 9 ns Low Input and Output Leakage BENEFITS D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuit
11	VN0605T	Vishay Siliconix	N-Channel 60-V (D-S) MOSFETs BENEFITS D Low On-Resistance: 2.5 W D Low Threshold: <2.1 V D Low Input Capacitance: 22 pF D Fast Switching Speed: 7 ns D Low Input and Output Leakage D Low Offset Voltage D Low-Voltage Operation D Easily Driven Without Buffering D High-Speed Circ
12	VN0606M	Siliconix	N-Channel Enhancement Mode MOSFET Transistors D D D D D Low On-Resistance: 1.2 W Low Threshold: <1.6 V Low Input Capacitance: 35 pF Fast Switching Speed: 9 ns Low Input and Output Leakage TO-226AA (TO-92) S 1 Benefits D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buff
13	VN0300L	Vishay Siliconix	N-Channel MOSFETs D D D D D Low On-Resistance: 0.85 W Low Threshold: 1.4 V Low Input Capacitance: 38 pF Fast Switching Speed: 9 ns Low Input and Output Leakage BENEFITS D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuit
14	VN0606N	Siliconix	N-Channel Enhancement Mode MOSFET Transistors D D D D D Low On-Resistance: 1.2 W Low Threshold: <1.6 V Low Input Capacitance: 35 pF Fast Switching Speed: 9 ns Low Input and Output Leakage TO-226AA (TO-92) S 1 Benefits D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buff
15	VN0300L	Siliconix	N-Channel Enhancement-Mode MOS Transistors