Siliconix VCR Hoja de datos

No.	parte #	Fabricante	Descripción
1	VCR4N	Vishay Siliconix	JFET Voltage-Controlled Resistors D Continuous Voltage-Controlled Resistance D High Off-Isolation D High Input Impedance BENEFITS D Gain Ranging Capability/Wide Range Signal Attenuation D No Circuit Interaction D Simplified Drive APPLICATIONS D Variable Gain Amplifiers D Voltage Co
2	VCR7N	Vishay Siliconix	JFET Voltage-Controlled Resistors D Continuous Voltage-Controlled Resistance D High Off-Isolation D High Input Impedance BENEFITS D Gain Ranging Capability/Wide Range Signal Attenuation D No Circuit Interaction D Simplified Drive APPLICATIONS D Variable Gain Amplifiers D Voltage Co
3	VCR7N	Siliconix	JFET Voltage Controlled Resistors three n-channel devices with rDS(ON) ranging from 20 - 8000 il. Also featured is a p-channel device with rDS(ON) specified between 70 and 200 il. All packages are hermetically sealed and may be processed per MIL-S-19500. (See Section 1.) For addition
4	VCR4N	Siliconix	JFET Voltage Controlled Resistors three n-channel devices with rDS(ON) ranging from 20 - 8000 il. Also featured is a p-channel device with rDS(ON) specified between 70 and 200 il. All packages are hermetically sealed and may be processed per MIL-S-19500. (See Section 1.) For addition
5	VCR3P	Siliconix	JFET Voltage Controlled Resistors three n-channel devices with rDS(ON) ranging from 20 - 8000 il. Also featured is a p-channel device with rDS(ON) specified between 70 and 200 il. All packages are hermetically sealed and may be processed per MIL-S-19500. (See Section 1.) For addition
6	VCR2N	Vishay Siliconix	JFET Voltage-Controlled Resistors D Continuous Voltage-Controlled Resistance D High Off-Isolation D High Input Impedance BENEFITS D Gain Ranging Capability/Wide Range Signal Attenuation D No Circuit Interaction D Simplified Drive APPLICATIONS D Variable Gain Amplifiers D Voltage Co
7	VCR2N	Siliconix	JFET Voltage Controlled Resistors three n-channel devices with rDS(ON) ranging from 20 - 8000 il. Also featured is a p-channel device with rDS(ON) specified between 70 and 200 il. All packages are hermetically sealed and may be processed per MIL-S-19500. (See Section 1.) For addition
8	VCR11N	Siliconix	voltage-controlled resistor FET VGS=-15V,VDS=0 IG = -lilA, VDS = 0 V ID= lilA, VDS= 10V n VGS= O,ID = 0 f = 1 kHz VGD=-10V,IS=0 pF VGS= -10V,ID= 0 f = 1 MHz VOS= 100mV rOSl - 200l! VGSl =VGS2 r[>SI = 2kl! NSH* 'Contact factory for geometry information. 3-134 Siliconix