| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Siliconix |
N-Channel Lateral DMOS FETs an integrated zener diode designed to protect the gate from electrical " Spikes" or overstress. For additional design information please see performance curves DMCB, which are located in Section 7. SIMILAR PRODUCTS • Quad Array, See SD5000 Series • S |
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Siliconix |
n-channel dual enhancement mode lateral D-MOS FET • High Figure-of-Merit gfs/C • Ultra Low Feedback Capacitance 0.3 pF • Low Output Capacitance • Low Input (Gate) Leakage • Non-Critical Operating CurrentNoltage • Matched Characteristics BENEFITS • High Frequency Performance • High Slew Rate • High |
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Siliconix |
N-Channel Lateral DMOS FETs an integrated zener diode designed to protect the gate from electrical " Spikes" or overstress. For additional design information please see performance curves DMCB, which are located in Section 7. SIMILAR PRODUCTS • Quad Array, See SD5000 Series • S |
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Siliconix |
N-Channel Lateral DMOS FETs an integrated zener diode designed to protect the gate from electrical " Spikes" or overstress. For additional design information please see performance curves DMCB, which are located in Section 7. SIMILAR PRODUCTS • Quad Array, See SD5000 Series • S |
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Siliconix |
N-Channel Lateral DMOS FETs a poly-silicon gate. For additional design information please see performance curves DMCB, which are located in Section 7. SIMILAR PRODUCTS • Quad Array, See SD5000 Series • SO-14 Array, See SD5400 Series • Zener Protection, See SD211 DE Series • SOT |
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Siliconix |
N-Channel Lateral DMOS FETs a poly-silicon gate. For additional design information please see performance curves DMCB, which are located in Section 7. SIMILAR PRODUCTS • Quad Array, See SD5000 Series • SO-14 Array, See SD5400 Series • Zener Protection, See SD211 DE Series • SOT |
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Siliconix |
N-Channel Lateral DMOS FETs a poly-silicon gate. For additional design information please see performance curves DMCB, which are located in Section 7. SIMILAR PRODUCTS • Quad Array, See SD5000 Series • SO-14 Array, See SD5400 Series • Zener Protection, See SD211 DE Series • SOT |
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Vishay Siliconix |
Small Signal Switching Diode • Silicon epitaxial planar diode • Fast switching diode, especially suited for applications requiring high voltage capability • AEC-Q101 qualified • Base P/N-E3 - RoHS-compliant, commercial grade • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified • |
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Siliconix |
n-channel D-MOS FET • High Figure-of-Merit gfs/C • High Speed Switch « 1 Ins) • High Gain • Wide Dynamic Range-Input = • Low Voltage Requirements Battery Operation BENEFITS • High Frequency Gain • High Speed Switching • Low Distortion ABSOLUTE MAXIMUM RATINGS (OC) Drai |
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Vishay Siliconix |
Dual Common-Anode Small-Signal High-Voltage Switching Diode • Silicon Epitaxial Planar Diode • Fast switching dual common-anode diode, especially suited for applications requiring high voltage capability 2 1 1 2 3 Mechanical Data Case: SOT-23 (TO-236AB) Plastic case Weight: approx. 8.8 mg Packaging Codes/Opt |
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Vishay Siliconix |
Dual In-Series Small-Signal High-Voltage Switching Diode • Silicon epitaxial planar diode • Fast switching dual in-series diode, especially suited for applications requiring high voltage capability • AEC-Q101 qualified • Base P/N-E3 - RoHS-compliant, commercial grade • Base P/N-HE3 - RoHS-compliant, AEC-Q1 |
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Siliconix |
n-channel dual enhancement mode lateral D-MOS FET • High Figure-of-Merit gfs/C • Ultra Low Feedback Capacitance 0.3 pF • Low Output Capacitance • Low Input (Gate) Leakage • Non-Critical Operating CurrentNoltage • Matched Characteristics BENEFITS • High Frequency Performance • High Slew Rate • High |
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Desde 2024. D4U Semiconductor.
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