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Siliconix |
n-channel JFET ) G s D GDS 0 D0 Bottom View Characteristic 12'51 'GSS Gate Reverse Current (Note 1) VOS(of1) Gate-Source Cutoff Voltage 1'3: BVGSS I-T I~~ lOSS 17 ' 0 (011) 'OS(on! Gate-Source Breakdown Voltage Dram Saturation Current INote 2) Dram Cutoff Curr |
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Siliconix |
n-channel JFET ) G s D GDS 0 D0 Bottom View Characteristic 12'51 'GSS Gate Reverse Current (Note 1) VOS(of1) Gate-Source Cutoff Voltage 1'3: BVGSS I-T I~~ lOSS 17 ' 0 (011) 'OS(on! Gate-Source Breakdown Voltage Dram Saturation Current INote 2) Dram Cutoff Curr |
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Siliconix |
n-channel JFET l iyl' ividX Test Conditions "251 IGSS VGS(offl '3 T _A BVGSS 4 T lOSS 51 IO(off) 5 C rOSlon) Gate Reverse Current (Note 1) Gate-Source Cutoff Voltage -4.5 Gate-5ource Breakdown Voltage -25 Drain Saturation Current (Note 2) 500 Drain CU10f |
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Siliconix |
n-channel JFET l iyl' ividX Test Conditions "251 IGSS VGS(offl '3 T _A BVGSS 4 T lOSS 51 IO(off) 5 C rOSlon) Gate Reverse Current (Note 1) Gate-Source Cutoff Voltage -4.5 Gate-5ource Breakdown Voltage -25 Drain Saturation Current (Note 2) 500 Drain CU10f |
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Siliconix |
n-channel JFET l iyl' ividX Test Conditions "251 IGSS VGS(offl '3 T _A BVGSS 4 T lOSS 51 IO(off) 5 C rOSlon) Gate Reverse Current (Note 1) Gate-Source Cutoff Voltage -4.5 Gate-5ource Breakdown Voltage -25 Drain Saturation Current (Note 2) 500 Drain CU10f |
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Desde 2024. D4U Semiconductor.
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