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Silicon Storage Technology Inc |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash • Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF512/010/020/040 – 2.7-3.6V for SST39VF512/010/020/040 • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 10 |
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Silicon Storage Technology Inc |
2 Megabit (256K x 8) Multi-Purpose Flash • Organized as 256 K X 8 • Single 5.0V Read and Write Operations • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption: – Active Current: 20 mA (typical) – Standby Current: 10 µA |
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Silicon Storage Technology Inc |
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub • Firmware Hub for Intel 8xx Chipsets • 2 Mbit, 3 Mbit, 4 Mbit, or 8 Mbit SuperFlash memory array for code/data storage – SST49LF002A: 256K x8 (2 Mbit) – SST49LF003A: 384K x8 (3 Mbit) – SST49LF004A: 512K x8 (4 Mbit) – SST49LF008A: 1024K x8 (8 Mbit) |
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Silicon Storage Technology Inc |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash • Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF512/010/020/040 – 2.7-3.6V for SST39VF512/010/020/040 • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 10 |
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Silicon Storage Technology |
High-Gain Power Amplifier easy board-level usage along with high-speed power-up/down control through a single combined reference voltage pin, and is offered in a 16-contact VQFN package. Features • High Gain: – Typically 29 dB gain across 2.4 –2.5 GHz over temperature 0°C to |
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Silicon Storage Technology |
High-Gain Power Amplifier easy board-level usage along with high-speed power-up/down control through a single combined reference voltage pin and is offered in both 12-contact XQFN and 6-contact XSON packages. Features • High Gain: – Typically 30 dB gain across 2.4~2.5 GHz ov |
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Silicon Storage Technology |
High-Gain Power Amplifier • High Gain: – Typically 28 dB gain across 2.4~2.5 GHz over temperature 0°C to +85°C • High linear output power: – >28 dBm P1dB - Please refer to “Absolute Maximum Stress Ratings” on page 5 – Meets 802.11g OFDM AC |
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Silicon Storage Technology |
High-Gain Power Amplifier • High Gain: – Typically 32 dB gain across 2.4~2.5 GHz over temperature 0°C to +85°C High linear output power: – >26 dBm P1dB - Please refer to “Absolute Maximum Stress Ratings” on page 4 – Meets 802.11g OFDM ACPR requirement up to 23 dBm – ~4% adde |
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Silicon Storage Technology |
2.4 GHz High-Power and High-Gain Power Amplifier easy board-level usage along with high-speed power-up/-down control. The SST12CP11 is offered in 16-contact VQFN package. Features • High Gain: – Typically 34 dB gain across 2.4 –2.5 GHz Block Diagram VCC1 VCC2 VCC3 • High linear output power (at 5 |
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Silicon Storage Technology |
4.9-5.8 GHz High-Linearity Power Amplifier • Small Package Size • High Linear Output Power: – 802.11a OFDM Spectrum mask compliance up to 23 dBm – Added EVM~2.5% up to 18 dBm, typically, across 5.1-5.8 GHz for 54 Mbps 802.11a signal • High Power-added Efficiency/Low Operating Current for 54 |
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Desde 2024. D4U Semiconductor.
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