Silan Microelectronics SVT Hoja de datos

No.	parte #	Fabricante	Descripción
1	SVT120N08T	Silan Microelectronics	80V N-CHANNEL MOSFET  120A,80V, RDS(on)(typ.)=7mΩ@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability ORDERING INFORMATION Part No. SVT120N08T SVT120N08S SVT120N08STR Package TO-220-3L TO-263-2L TO-263-2L Marking 120N08T 120N08S 120N08S
2	SVT035R5ND	Silan Microelectronics	N-CHANNEL MOSFET  100A, 30V, RDS(on)(typ.)=4.0m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE 2 1 1 3 23 1.Gate 2.Drain 3.Source TO-251J-3L 1 3 TO-252-2L 1 23 TO-220-3L S V TX X X R X N X Silan Low voltag
3	SVT035R5NT	Silan Microelectronics	N-CHANNEL MOSFET  100A, 30V, RDS(on)(typ.)=4.0m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE 2 1 1 3 23 1.Gate 2.Drain 3.Source TO-251J-3L 1 3 TO-252-2L 1 23 TO-220-3L S V TX X X R X N X Silan Low voltag
4	SVT03380PSA	Silan Microelectronics	P-CHANNEL MOSFET  -6.5A，-30V，RDS(on)(typ.) =24m@VGS=-10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability  100% avalanche tested  Pb-free lead plating  RoHS compliant SOP-8-225-1.27 KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(t
5	SVT20240NT	Silan Microelectronics	N-CHANNEL MOSFET  72A, 200V, RDS(on)(typ.)=19.7m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability TO-247-3L 1 2 3 TO-220-3L ORDERING INFORMATION Part No. SVT20240NT SVT20240NP7 SVT20240NS SVT20240NSTR Package TO-220-3L TO-247-3L
6	SVT042R5NL5	Silan Microelectronics	N-CHANNEL MOSFET  240A, 40V, Low gate charge  Low Crss  Fast switching  Improved dv/dt capability TO-220-3L 5 678 8765 43 21 1 234 PDFN-8-5X6X0.95-1.27 ORDERING INFORMATION Part No. SVT042R5NL5TR SVT042R5NT Package PDFN-8-5X6X0.95-1.27 TO-220-3L Marking
7	SVT078R0NT	Silan Microelectronics	N-CHANNEL MOSFET  88A, 68V，RDS(on)(typ.)=6.0m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 1 23 TO-220-3L 1 3 TO-263-2L ORDERING INFORMATION Part No. SVT078R0NT SVT078R0NS SVT078R0NSTR Package TO-220-3L TO-263-2L TO-263-2L
8	SVT035R5NMJ	Silan Microelectronics	N-CHANNEL MOSFET  100A, 30V, RDS(on)(typ.)=4.0m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE 2 1 1 3 23 1.Gate 2.Drain 3.Source TO-251J-3L 1 3 TO-252-2L 1 23 TO-220-3L S V TX X X R X N X Silan Low voltag
9	SVT068R5ND	Silan Microelectronics	N-CHANNEL MOSFET  80A, 60V, RDS(on)(typ.)=7.0m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 2 S1 8D S2 7D 1 S3 6D G4 5D 3 1.Gate 2.Drain 3.Source 13 TO-252-2L PDFN-8-5X6X0.95-1.27 1 2 3 TO-220-3L 1 3 TO-263-2L OR
10	SVT033R5NT	Silan Microelectronics	N-CHANNEL MOSFET  180A, 30V, RDS(on)(typ.)=2.8m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 1 23 TO-220-3L ORDERING INFORMATION Part No. SVT033R5NT Package TO-220-3L Marking 033R5NT Hazardous Substance Control Pb free Pa
11	SVT03100ND	Silan Microelectronics	30V N-CHANNEL MOSFET  60A, 30V, RDS(on)(typ.)=8.5m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE 2 1 3 1.Gate 2.Drain 3.Source 1 3 TO-252-2L S V TX X X R X N X Silan Low voltage trench MOS products Nominal voltage, us
12	SVT13N06SA	Silan Microelectronics	60V N-CHANNEL MOSFET  13A，60V，RDS(on)(typ.)=9m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability ORDERING INFORMATION Part No. SVT13N06SA SVT13N06SATR SVT13N06DTR Package SOP-8-225-1.27 SOP-8-225-1.27 TO-252-2L Marking 13N06SA 13N06S
13	SVT044R5NT	Silan Microelectronics	N-CHANNEL MOSFET  178A,40V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 2 S1 8D S2 7D 1 S3 6D G4 5D 3 1.Gate 2.Drain 3.Source 1 2 3 TO-220-3L 8 765 13 TO-252-2L 1 2 34 PDFN-8-5X6X0.95-1.27 ORDERING INFORMATION Part No. S
14	SVT120N08S	Silan Microelectronics	80V N-CHANNEL MOSFET  120A,80V, RDS(on)(typ.)=7mΩ@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability ORDERING INFORMATION Part No. SVT120N08T SVT120N08S SVT120N08STR Package TO-220-3L TO-263-2L TO-263-2L Marking 120N08T 120N08S 120N08S
15	SVT10111ND	Silan Microelectronics	100V N-CHANNEL MOSFET  14A,100V, RDS(on)(typ.)=85m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE 2 1 3 1.Gate 2.Drain 3.Source 1 3 TO-252-2L S V TX X X R X N X Silan Low voltage trench MOS products Nominal voltage, usi
16	SVT035R5NSA	Silan Microelectronics	N-CHANNEL MOSFET 4. Gate 1, 2, 3. Source 5, 6; 7, 8. Drain 5678 4 12 3  21A, 30V, RDS(on)(typ.)= 4.0m@VGS=10V  Low gate charge  Low Crss  Fast switching  Extreme dv/dt rated SOP-8-225-1.27 ORDERING INFORMATION Part No. SVT035R5NSA SVT035R5NSATR Package
17	SVTP035R5NL3	Silan Microelectronics	N-CHANNEL MOSFET  54A, 30V, RDS(on)(typ.)=4.0m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability S1 S2 S3 G4 8D 7D 6D 5D 8 7 6 5 65 87 1 2 3 4 4 3 2 1 PDFN-8-3.3×3.3×0.75-0.65 ORDERING INFORMATION Part No. Package SVTP035R
18	SVT044R5NL5	Silan Microelectronics	N-CHANNEL MOSFET  178A,40V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 2 S1 8D S2 7D 1 S3 6D G4 5D 3 1.Gate 2.Drain 3.Source 1 2 3 TO-220-3L 8 765 13 TO-252-2L 1 2 34 PDFN-8-5X6X0.95-1.27 ORDERING INFORMATION Part No. S
19	SVT1040SA	Silan Microelectronics	N-CHANNEL MOSFET  10A, 40V, RDS(on)(typ.)=15m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 78 56 2 4 1 1、3. Source 3 2、4. Gate 7、8；5、6. Drain 8 1 23 4 SOP-8-225-1.27 ORDERING INFORMATION Part No. SVT1040SA SVT1040SATR
20	SVT043R0NL5	Silan Microelectronics	N-CHANNEL MOSFET  180A, 40V, RDS(on)(typ.)=2.6m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability TO-220-3L 5 678 8765 43 21 1 234 PDFN-8-5X6X0.95-1.27 ORDERING INFORMATION Part No. SVT043R0NT SVT043R0NL5TR Package TO-220-3L