No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Siemens Semiconductors |
(BSTP3xxxx) Silicon Controlled Rectifier |
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Siemens Semiconductors |
(BSTP3xxxx) Silicon Controlled Rectifier |
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Siemens Semiconductor |
IRED ll optical data refer to an ambient temperature of 25 °C. Parameter Emission wavelength Spectral bandwidth at 50 % of Φmax Opt. power coupled into 62.5 µm multimode fiber, NA = 0.27 Opt. power coupled into 50 µm multimode fiber, NA = 0.2 Forward volt |
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Siemens Semiconductors |
Silicon Controlled Rectifier |
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Siemens Semiconductors |
Silicon Controlled Rectifier |
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Siemens Semiconductors |
Silicon Controlled Rectifier |
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Siemens Semiconductor |
1550 nm Laser in Receptacle Package / Low Power |
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Siemens Semiconductor |
(STL81004x / STL81005x) 1550 nm Laser in Coaxial Package with SM-Pigtail / Low Power … + 85 260 °C °C °C Semiconductor Group 1 02.95 STL 81004X STL 81005X Maximum Ratings (cont’d) Parameter Laser Diode Direct forward current Radiant power CW Reverse voltage Monitor Diode Reverse voltage Symbol Values Unit IF max Φe 120 1 2 |
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Siemens Semiconductor |
1300 nm Laser in Receptacle Package Group 1 02.95 STL 51007X Characteristics All optical data refer to a coupled 10/125 µm SM fiber, TC = 25 °C. Parameter Laser Diode Optical output power Emission wavelength center of range Φe = 0.2 mW Spectral bandwidth Φe = 0.2 mW (RMS) Threshol |
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Siemens Semiconductors |
(BSTP3xxxx) Silicon Controlled Rectifier |
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Siemens Semiconductors |
Silicon Controlled Rectifier |
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Siemens Semiconductors |
Silicon Controlled Rectifier |
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Siemens Semiconductors |
Silicon Controlled Rectifier |
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