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Siemens Semiconductor Group |
GaAs-IR-Lumineszenzdioden 950 nm GaAs Infrared Emitters 950 nm q Fabricated in a liquid phase epitaxy process q Suitable for surface mounting (SMT) q Available on tape and reel q Same package as photodiode SFH 2500/ SFH 2505 and phototransistor SFH 3500/ SFH 3505 q High reliability q Spectral match with silicon |
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Siemens Semiconductor Group |
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm q GaAIAs infrared emitting diode, fabricated in a liquid phase epitaxy process q Anode is electrically connected to the case q High reliability q Matches all Si-Photodetectors q Hermetically sealed package q SFH 480: Same package as SFH 216 q SFH 481 |
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Siemens Semiconductor Group |
2.8KV TRIOS OPTOCOUPLERS |
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Siemens Semiconductor Group |
HIGH SPEED OPTOCOUPLER • Surface Mountable • Industry Standard SOIC-8 Footprint • Compatible with Infrared Vapor Phase Reflow and Wave Soldering Processes • Isolation Voltage, 2500 VRMS • Very High Common Mode Transient Immunity: 15000 V/µ s at VCM=1500 V Guaranteed (SFH634 |
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Siemens Semiconductor Group |
PLASTIC FIBER OPTIC TRANSMITTER DIODE |
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Siemens Semiconductor Group |
Silicon PIN Photodiode with Daylight Filter q Especially suitable for applications of 880 nm q Kurze Schaltzeit (typ. 20 ns) q 5 mm-Plastikbauform im LED-Gehäuse q Auch gegurtet lieferbar 880 nm q Short-switching time (typ. 20 ns) q 5 mm LED plastic package q Also available on tape Anwendun |
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Siemens Semiconductor Group |
PIN PHOTODIODE |
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Siemens Semiconductor Group |
WITH IR FILTER PLASTIC FIBER OPTIC PHOTOTRANSISTOR DETECTOR |
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Siemens Semiconductor Group |
PLASTIC FIBER OPTIC TRANSMITTER DIODE |
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Siemens Semiconductor Group |
Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter q High pulse power and high radiant flux Φe q Very short switching times (10 ns) q Low forward voltage and power dissipation q Very high long-time stability q High reliability q Available on tape and reel q Suitable for surface mounting (SMT) q Same |
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Siemens Semiconductor Group |
TRIOS PHOTOTRANSISTOR OPTOCOUPLER • High Current Transfer Ratios SFH600-0, 40 to 80% SFH600-1, 63 to 125% SFH600-2, 100 to 200% SFH600-3, 160 to 320% • Isolation Test Voltage (1 Sec.), 5300 VACRMS • VCEsat 0.25 (£0.4) V, IF=10 mA, IC=2.5 mA • High Quality Premium Device • Long Term S |
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Siemens Semiconductor Group |
FIBER OPTIC PIN PHOTODIODE |
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Siemens Semiconductor Group |
PIN PHOTODIODE |
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Siemens Semiconductor Group |
PIN PHOTODIODE q Especially suitable for applications from 400 nm to 1100 nm (SFH 203) and of 880 nm (SFH 203 FA) q Short switching time (typ. 5 ns) q 5 mm LED plastic package q Also available on tape Applications q Industrial electronics q For control and drive c |
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Siemens Semiconductor Group |
PIN PHOTODIODE q Especially suitable for applications from 400 nm to 1100 nm (SFH 203) and of 880 nm (SFH 203 FA) q Short switching time (typ. 5 ns) q 5 mm LED plastic package q Also available on tape Applications q Industrial electronics q For control and drive c |
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Siemens Semiconductor Group |
PIN PHOTODIODE q Especially suitable for applications from 400 nm to 1100 nm (SFH 203 P) and of 880 nm (SFH 203 PFA) q Short switching time (typ. 5 ns) q 5 mm LED plastic package Applications q q q q Wechsellichtbetrieb q LWL Industrial electronics For control a |
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Siemens Semiconductor Group |
PIN PHOTODIODE q Especially suitable for applications from 380 nm to 1100 nm (SFH 229) and of 880 nm (SFH 229 FA) q Short switching time (typ. 10 ns) q 3 mm LED plastic package q Also available on tape Applications q Photointerrupters q Industrial electronics q For |
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Siemens Semiconductor Group |
WITH DAYLIGHT FILTER SILICON DIFFERENTIAL PHOTODIODE |
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Siemens Semiconductor Group |
SILICON PHOTODIODE q Especially suitable for applications from q q q q 400 nm to 1100 nm (SFH 2540/2545) and of 880 nm (SFH 2540 FA/2545 FA) Short switching time (typ. 5 ns) 5 mm LED plastic package Also available on tape Suitable for surface mounting Applications q |
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Siemens Semiconductor Group |
NPN-Silizium-Fototransistor Silicon NPN Phototransistor q Especially suitable for applications from Bereich von 450 nm bis 1100 nm (SFH 303) und bei 880 nm (SFH 303 FA) q Hohe Linearität q 5 mm-Plastikbauform im LED-Gehäuse q Auch gegurtet und gruppiert lieferbar Anwendungen q Lichtschranken für Gleich- |
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Desde 2024. D4U Semiconductor.
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