Siemens Semiconductor Group Q6 Hoja de datos

No.	parte #	Fabricante	Descripción
1	Q62702-A711	Siemens Semiconductor Group	Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) t ≤ 10 ms Total power dissipation BAS 70 TS ≤ 66 ˚C2) BAS 70-04 … TS ≤ 40 ˚C2) Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction - ambient3) BAS 70 BAS 70-04 … Junction - soldering point BAS 70 BAS
2	Q62702-A121	Siemens Semiconductor Group	Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz)
3	Q62702-A79	Siemens Semiconductor Group	Silicon Switching Diodes (High-speed/ high-voltage switch) IR – – – – 100 100 nA µA – – 1 1.25 120 200 250 – – – – – – V Values typ. max. Unit Forward voltage IF = 100 mA IF = 200 mA Reverse current VR = VR max VR = VR max; Tj = 150 ˚C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recove
4	Q62702-B628	Siemens Semiconductor Group	Silicon Tuning Diode (Extented frequency range up to 2.5 GHz; special design for use in TV-SAT indoor units) Extented frequency range up to 2.5 GHz; special design for use in TV-SAT indoor units q High capacitance ratio q Type BB 833 Ordering Code (tape and reel) Q62702-B628 Pin Configuration 1 2 C A Marking white X Package SOD-323 Maximum Ratings Par
5	Q62702-C1888	Siemens Semiconductor Group	PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847, BC 849, BC 850 (NPN) Type BC 856 A BC 856 B BC 857 A BC 857 B B
6	Q62702-C2291	Siemens Semiconductor Group	NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit) breakdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA µA 164 70 V 0.3 1.5 3 62 1.1 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.8 VEB = 10 V, IC = 0 DC current gain IC = 5 mA, VCE =
7	Q60103-X152-P	Siemens Semiconductor Group	pnp germanium transistors
8	Q60218-X46-V16	Siemens Semiconductor Group	NPN SILICON PLANAR TRANSISTORS
9	Q62702-A1067	Siemens Semiconductor Group	Silicon Schottky Diode otherwise specified. Parameter Symbol min. DC Characteristics Breakdown voltage I(BR) = 10 µA Forward voltage IF = 1 mA IF = 10 mA IF = 15 mA Reverse current VR = 30 V VR = 40 V Diode capacitance VR = 0 V, f = 1 MHz Charge carrier life time IF = 25 m
10	Q62702-A1189	Siemens Semiconductor Group	Silicon Schottky Diode (Rectifier Schottky diode for mobile communication Low voltage high inductane For power supply r DC characteristics Reverse current Symbol min. Values typ. max. µA 5 10 100 410 0.24 0.3 0.4 V Unit IR VR = 5 V VR = 8 V Reverse current IR - VR = 5 V, TA = 80 °C VR = 8 V, TA = 80 °C Forward voltage VF I F = 10 mA I F = 100 mA I F = 1000 mA
11	Q62702-A1270	Siemens Semiconductor Group	Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) C characteristics Diode capacitance CT 0.6 0.57 0.7 0.15 - pF VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Forward resistance rf Ls Ω nH IF = 5 mA, f = 100 MHz Series inductance Configuration of the shunt-diode - A perfect ground is essential for o
12	Q62702-A954	Siemens Semiconductor Group	Silicon PIN Diode – – 10 – – µS Values typ. – – max. 1.15 50 – – Unit V nA pF 0.23 0.2 0.35 – Ω nH Diode capacitance CT = f (VR) f = 1 MHz / f = 100 MHz Forward resistance rf = f (IF) f = 100 MHz
13	Q62702-B0907	Siemens Semiconductor Group	Silicon Variable Capacitance Diode (For VHF TV-tuners High capacitance ratio Low series inductance) 2.4 41.8 31.85 27 2.55 11.8 16.4 0.6 1.8 44.5 34.2 2.85 2.75 12.5 17.5 2 0.75 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2/C T25 11 - VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ra
14	Q62702-B63	Siemens Semiconductor Group	NPN SILICON EPIBASE TRANSISTORS
15	Q62702-B63	Siemens Semiconductor Group	PNP SILICON EPIBASE TRANSISTORS
16	Q62702-C168	Siemens Semiconductor Group	PNP SILICON TRANSISTOR
17	Q62702-C1774	Siemens Semiconductor Group	PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847, BC 849, BC 850 (NPN) Type BC 856 A BC 856 B BC 857 A BC 857 B B
18	Q62702-C2253	Siemens Semiconductor Group	NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit breakdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA µA 164 70 V 0.3 0.8 1.1 2.9 0.052 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.4 VEB = 5 V, IC = 0 DC current gain IC = 5 mA, VC
19	Q62702-C26	Siemens Semiconductor Group	PNP Silicon AF Switching Transistor (For general AF applications High breakdown voltage)
20	Q60203-Y59-G	Siemens Semiconductor Group	npn silicon planar transistors