| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Siemens Semiconductor Group |
Silicon Schottky Diode (Rectifier Schottky diode for mobile communication Low voltage high inductane For power supply r DC characteristics Reverse current Symbol min. Values typ. max. µA 5 10 100 410 0.24 0.3 0.4 V Unit IR VR = 5 V VR = 8 V Reverse current IR - VR = 5 V, TA = 80 °C VR = 8 V, TA = 80 °C Forward voltage VF I F = 10 mA I F = 100 mA I F = 1000 mA |
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Siemens Semiconductor Group |
Silicon Variable Capacitance Diode (For FM radio tuners with extended frequency band High tuning ratio at low supply voltage (car radio) tio VR = 2 V, 8 V, f = 1 MHz Capacitance matching VR = 2 V, 8 V Series resistance VR = 2 V, f = 100 MHz Q factor VR = 2 V, f = 100 MHz 1) Values typ. max. Unit IR – – CT 43 19.1 CT2 CT8 ∆CT C T rS Q 2.05 – – – 44.75 20.8 2.15 – 0.18 200 46.5 22.7 |
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Siemens Semiconductor Group |
OPTICALLY COUPLED HIGH SPEED MOSFET DRIVERS OPTOCOUPLER • Fast Turn On • Fast Turn Off • Low Input Current • Isolation Test Voltage, 5300 VACRMS APPLICATIONS • Motor Drive Controls • IGBT-predrivers • AC/DC Power Inverters DESCRIPTION The IL485 is a photovoltatic generator (optically coupled) designed to |
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Siemens Semiconductor Group |
T1(3mm) LED LAMP q q q q q colored, diffused package for use as optical indicator solder leads with stand-off available taped on reel load dump resistant acc. to DIN 40839 Semiconductor Group 1 1998-07-13 LR 3360, LS 3360, LO 3360 LY 3360, LG 3360, LP 3360 Typ |
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Siemens Semiconductor Group |
Silicon Schottky Diode (Rectifier Schottky diode with extreme low VF drop for mobile communication For power supply C characteristics Reverse current Symbol min. Values typ. max. mA 0.3 0.45 18 µA V 0.12 0.2 0.3 Unit IR VR = 5 V VR = 8 V Reverse current IR VF - VR = 8 V, TA = 80 °C Forward voltage I F = 10 mA I F = 100 mA I F = 1000 mA AC characteristics Dio |
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Siemens Semiconductor Group |
Silicon Schottky Diode (Rectifier Schottky diode for modem applications High reverse voltage For power supply) e specified. Parameter DC characteristics Breakdown voltage Symbol min. Values typ. max. V µA 5 0.325 0.37 0.47 50 V Unit V(BR) IR 240 I (BR) = 500 µA Reverse current VR = 200 V VR = 240 Forward voltage VF I F = 10 mA I F = 20 mA I F = 50 mA AC |
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Siemens Semiconductor Group |
Silicon Switching Diode Array (Electrically insulated high-voltage medium-speed diodes) V, TA = 150 ˚C AC characteristics Diode capacitance VR = 0, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA Test circuit for reverse recovery time CD trr – – 6 1 – – pF µs Values typ. max. Unit V(BR) VF IR |
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Siemens Semiconductor Group |
Silicon Variable Capacitance Diode (For FM radio tuner with extended frequency band High tuning ratio low supply voltage car radio) V, f = 1 MHz VR = 8 V, f = 1 MHz Capacitance ratio CT2/CT8 2.28 ∆CT/CT 1.5 2.42 2) % Ω - VR = 2 V, VR = 8 V, f = 1 MHz Capacitance matching Series resistance VR = 2 V, VR = 8 V, f = 1 MHz rs CT = 38 pF, f = 100 MHz Semiconductor Group 2 Oct-10 |
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Siemens Semiconductor Group |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) HL EH PD21 GaAs FET Electrical characteristics (TA = 25°C , unless otherwise specified) Characteristics Drain-source saturation current VDS = 3 V VGS = 0 V CLY 5 typ 800 10 5 -2.8 11.0 max 1200 100 20 -1.8 Unit mA µA µA V dB ______________________ |
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Siemens Semiconductor Group |
Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes) V, TA = 150 ˚C VR = 75 V, TA = 150 ˚C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA Test circuit for reverse recovery time CD trr – – – – 2 6 pF ns V(BR) VF – – |
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Siemens Semiconductor Group |
Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes) A = 150 ˚C VR = 75 V, TA = 150 ˚C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA Test circuit for reverse recovery time CD trr – – – – 2 6 pF ns V(BR) VF – – – – |
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Siemens Semiconductor Group |
C16x-Family of High-Performance CMOS 16-Bit Microcontrollers single-chip CMOS microcontrollers. It combines high CPU performance (up to 10 million instructions per second) with high peripheral functionality and enhanced IO-capabilities. These devices derive the CPU clock signal (operating clock) directly from |
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Siemens Semiconductor Group |
Silicon Schottky Diode (Rectifier Schottky diode for mobile communication Low voltage high inductane For power supply t ≤ 10 ms Total power dissipation BAS 70 TS ≤ 66 ˚C2) BAS 70-04 … TS ≤ 40 ˚C2) Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction - ambient3) BAS 70 BAS 70-04 … Junction - soldering point BAS 70 BAS |
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Siemens Semiconductor Group |
GaAs FET (Power amplifier for mobile phones For frequencies up to 3 GHz) 1/77 17.12.96 HL EH PD 21 GaAs FET Electrical characteristics (TA = 25°C , unless otherwise specified) Characteristics Drain-source saturation current VDS = 3 V VGS = 0 V CLY 2 _____________________________________________________________________ |
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Siemens Semiconductor Group |
EXTREMELY LOW NOISE NPN SILICON BROADBAND TRANSISTORS |
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Siemens Semiconductor Group |
EXTREMELY LOW NOISE NPN SILICON BROADBAND TRANSISTORS |
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Siemens Semiconductor Group |
Symbol MULTILED 2.5 mm x 5 mm/ Partly Diffused q q q q q q q q colorless, partly diffused package 2.54 mm lead spacing high signal efficiency possible by color change of the LED indication of different operation modes is possible by color change of the LED from red to green both colors can be co |
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Siemens Semiconductor Group |
Power TOPLED Hyper-Bright LED • • • • • • • • P-LCC-4 package color of package: white for use as optical indicator for backlighting, optical coupling into light pipes and lenses suitable for all SMT assembly methods available taped on reel (8 mm tape) JEDEC Level 3 IR reflow sold |
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Siemens Semiconductor Group |
Power TOPLED Hyper-Bright LED • • • • • • • • P-LCC-4 package color of package: white for use as optical indicator for backlighting, optical coupling into light pipes and lenses suitable for all SMT assembly methods available taped on reel (8 mm tape) JEDEC Level 3 IR reflow sold |
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Siemens Semiconductor Group |
Symbol LED 5 mm T1 3/4 LED/ Partly Diffused q q q q q colored, partly diffused package for use as optical indicator in frontpanels solder leads without stand-off availabel taped on reel load dump resistance acc. to DIN 40839 Semiconductor Group 1 11.96 LR H380, LS H380, LY H380 LG H380 T |
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Desde 2024. D4U Semiconductor.
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