| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Siemens Semiconductor Group |
GaAs MMIC (Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones) ol Circuit RF OUT RF IN Pin Configuration: Pin # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Name VD Cell n. c. RF IN Cell RF IN n. c. Vneg Vcon n. c. n. c. n. c. n. c. RF out RF out RF out RF out n. c. n. c. RF out / drain voltage final stage RF out / |
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Siemens Semiconductor Group |
GaAs-IR-Lumineszenzdioden 950 nm GaAs Infrared Emitters 950 nm q Fabricated in a liquid phase epitaxy process q Suitable for surface mounting (SMT) q Available on tape and reel q Same package as photodiode SFH 2500/ SFH 2505 and phototransistor SFH 3500/ SFH 3505 q High reliability q Spectral match with silicon |
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Siemens Semiconductor Group |
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm q GaAIAs infrared emitting diode, fabricated in a liquid phase epitaxy process q Anode is electrically connected to the case q High reliability q Matches all Si-Photodetectors q Hermetically sealed package q SFH 480: Same package as SFH 216 q SFH 481 |
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Siemens Semiconductor Group |
5 mm (T1 3/4) MULTILED / Diffused q q q q q q q q colorless, partly diffused package 2.54 mm lead spacing high signal efficiency possible by color change of the LED indication of different operation modes is possible by color change from green to yellow, orange and super-red both co |
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Siemens Semiconductor Group |
Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter q High pulse power and high radiant flux Φe q Very short switching times (10 ns) q Low forward voltage and power dissipation q Very high long-time stability q High reliability q Available on tape and reel q Suitable for surface mounting (SMT) q Same |
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Siemens Semiconductor Group |
TWO-COLOR/ RED AND GREEN CYLINDER LED LAMP |
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Siemens Semiconductor Group |
GaAlAs-IR-Lumineszenzdiode in SMT-Gehause GaAlAs Infrared Emitter in SMT Package q Very highly efficient GaAIAs-LED q Good Linearity (Ie = f [IF]) at high currents q DC (with modulation) or pulsed operations are possible q High reliability q High pulse handling capability q Suitable for surface mounting (SMT) q Available on tape |
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Siemens Semiconductor Group |
GaAs-IR-Lumineszenzdioden 950 nm GaAs Infrared Emitters 950 nm q Fabricated in a liquid phase epitaxy process q Suitable for surface mounting (SMT) q Available on tape and reel q Same package as photodiode SFH 2500/ SFH 2505 and phototransistor SFH 3500/ SFH 3505 q High reliability q Spectral match with silicon |
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Siemens Semiconductor Group |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter q Stimulated emitter with high efficiency q Laser diode in diffuse package q Suitable esp. for pulse operation at high Wirkungsgrad Laserdiode in diffusem Gehäuse Besonders geeignet für Impulsbetrieb bei hohen Strömen Hohe Zuverlässigkeit Gegurtet l |
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Siemens Semiconductor Group |
GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters 880 nm Fabricated in a liquid phase epitaxy process Suitable for surface mounting (SMT) Available on tape and reel Same package as photodiode SFH 2500/ SFH 2505 q High reliability q Spectral match with silicon photodetectors q q q q Applications q IR remot |
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Siemens Semiconductor Group |
Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter q High pulse power and high radiant flux Φe q Very short switching times (10 ns) q Low forward voltage and power dissipation q Very high long-time stability q High reliability q Available on tape and reel q Suitable for surface mounting (SMT) q Same |
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Siemens Semiconductor Group |
Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter q High pulse power and high radiant flux Φe q Very short switching times (10 ns) q Low forward voltage and power dissipation q Very high long-time stability q Available on tape and reel Applications q High data transmission rate up to 100 Mbaud (IR |
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Siemens Semiconductor Group |
Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter q High pulse power and high radiant flux Φe q Very short switching times (10 ns) q Low forward voltage and power dissipation q Very high long-time stability q Available on tape and reel Applications q High data transmission rate up to 100 Mbaud (IR |
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Siemens Semiconductor Group |
GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm Radiation without IR in the visible red range Cathode is electrically connected to the case Very high efficiency High reliability Short switching time Same package as BP 103, LD 242 DIN humidity category in acc. with DIN 40040 GQG q Component subject |
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Siemens Semiconductor Group |
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm q GaAIAs infrared emitting diode, fabricated in a liquid phase epitaxy process q Anode is electrically connected to the case q High reliability q Matches all Si-Photodetectors q Hermetically sealed package q SFH 480: Same package as SFH 216 q SFH 481 |
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Siemens Semiconductor Group |
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm q GaAIAs infrared emitting diode, fabricated in a liquid phase epitaxy process q Anode is electrically connected to the case q High reliability q Matches all Si-Photodetectors q Hermetically sealed package q SFH 480: Same package as SFH 216 q SFH 481 |
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Siemens Semiconductor Group |
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter Highly efficient GaAlAs LED Anode is electrically connected to the case High pulse power High reliability DIN humidity category in acc. with DIN 40040 GQG q Same package as BPX 63, BP 103, LD 242, SFH 464 q q q q q Applications q IR remote controls |
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Siemens Semiconductor Group |
GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm q Fabricated in a liquid phase epitaxy process q High reliability q Spectral match with silicon photodetectors Applications q IR remote control of hi-fi and TV-sets, video Rundfunkgeräten, Videorecordern, Lichtdimmern q Gerätefernsteuerungen für Gl |
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Siemens Semiconductor Group |
GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm q Radiation without IR in the visible red range q Cathode is electrically connected to the case q Very high efficiency q High reliability q Short switching time Applications q Photointerrupters q Hermetically sealed package Typ Type SFH 4860 Bestel |
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Siemens Semiconductor Group |
GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm q Fabricated in a liquid phase epitaxy process q High reliability q High pulse handling capability q Good spectral match to silicon photodetectors q Same package as SFH 309, SFH 409 Applications q IR remote control for hifi and TV sets, video und Vi |
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Desde 2024. D4U Semiconductor.
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