| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Siemens Semiconductor Group |
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847, BC 849, BC 850 (NPN) Type BC 856 A BC 856 B BC 857 A BC 857 B B |
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Siemens Semiconductor Group |
5-V Low-Drop Voltage Regulator q q q q q q q q q q Output voltage tolerance ≤ ± 2 % Low-drop voltage Very low standby current consumption Overtemperature protection Reverse polarity protection Short-circuit proof Settable reset threshold Watchdog Wide temperature range Suitable f |
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Siemens Semiconductor Group |
NPN SILICON TRANSISTOR FOR LOW-NOISE RF BROADBAND AMPLIFIERS |
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Siemens Semiconductor Group |
Smart Lowside Power Switch • Logic Level Input • Input protection (ESD) • Thermal shutdown (with restart) • Overload protection • Short circuit protection • Overvoltage protection • Current limitation Product Summary Continuous drain source voltage On-state resistance Current |
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Siemens Semiconductor Group |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) . Parameter Symbol Values min. DC characteristics Breakdown voltage typ. 0.95 max. 50 1.2 Unit V(BR) IR VF 50 - V µA mV I (BR) = 5 µA Reverse current VR = 20 V Forward voltage I F = 100 mA AC characteristics Diode capacitance CT 0.3 0.21 1.2 |
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Siemens Semiconductor Group |
LOW INPUT CURRENT/ HIGH GAIN OPTOCOUPLER • High Current Transfer Ratio, 800% • Low Input Current, 0.5mA • High Output Current, 60mA • Isolation Test Voltage, 2500 VACRMS • TTL Compatible Output, VOL=0.1 V • High Common Mode Rejection, 500V/µsec. • Adjustable Bandwidth –Access to Base • Stand |
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Siemens Semiconductor Group |
Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) C characteristics Diode capacitance CT 0.6 0.57 0.7 0.15 - pF VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Forward resistance rf Ls Ω nH IF = 5 mA, f = 100 MHz Series inductance Configuration of the shunt-diode - A perfect ground is essential for o |
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Siemens Semiconductor Group |
Silicon Variable Capacitance Diode (For VHF TV-tuners High capacitance ratio Low series inductance) 2.4 41.8 31.85 27 2.55 11.8 16.4 0.6 1.8 44.5 34.2 2.85 2.75 12.5 17.5 2 0.75 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2/C T25 11 - VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ra |
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Siemens Semiconductor Group |
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847, BC 849, BC 850 (NPN) Type BC 856 A BC 856 B BC 857 A BC 857 B B |
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Siemens Semiconductor Group |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise/ high gain amplifiers up to 2 GHz.) ¥ ¥ ¥ ¥ ¥ ¥ HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz. For linear broadband amplifiers Hermetically sealed microwave package fT = 6.5 GHz, F = 3 dB at 2 GHz ESA Qualification pending Micro-X1 ESD: Elec |
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Siemens Semiconductor Group |
5-V Low-Drop Fixed Voltage Regulator • • • • • • • • • • • Output voltage tolerance ≤ ± 2 % Low-drop voltage Integrated overtemperature protection Reverse polarity protection Input voltage up to 42 V Overvoltage protection up to 65 V (≤ 400 ms) Short-circuit proof Suitable for use in au |
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Siemens Semiconductor Group |
Silicon Schottky Diode (Rectifier Schottky diode for mobile communication Low voltage high inductane For power supply r DC characteristics Reverse current Symbol min. Values typ. max. µA 5 10 100 410 0.24 0.3 0.4 V Unit IR VR = 5 V VR = 8 V Reverse current IR - VR = 5 V, TA = 80 °C VR = 8 V, TA = 80 °C Forward voltage VF I F = 10 mA I F = 100 mA I F = 1000 mA |
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Siemens Semiconductor Group |
Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring) |
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Siemens Semiconductor Group |
Silicon Tuning Diode (For UHF-TV-tuners High capacitance ratio Low series inductance) 9 20 16.1 2.4 2.3 7.5 9.8 pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2/C T25 CT1/C T28 ∆CT/C T 6 8.2 - VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MH |
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Siemens Semiconductor Group |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) 1 V, VR = 3 V, f = 1 MHz Series resistance VR = 1 V, f = 1 GHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group Semiconductor Group 22 Au 1998-11-01 -20-1998 BBY 53-02W Diode capacitance CT = f (V R) f = 1MHz 6 |
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Siemens Semiconductor Group |
Silicon Variable Capacitance Diode (For VHF TV-tuners High capacitance ratio Low series inductance) 2.4 41.8 31.85 27 2.55 11.8 16.4 0.6 1.8 44.5 34.2 2.85 2.75 12.5 17.5 2 0.75 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2/C T25 11 - VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ra |
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Siemens Semiconductor Group |
Silicon Variable Capacitance Diode (For VHF TV-tuners High capacitance ratio Low series inductance Low series resistance) T 39 29.4 2.5 2.4 41.8 31.85 2.7 2.55 11.8 16.4 0.6 0.6 44.5 34.2 2.85 2.75 12.5 17.5 2 0.75 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2/C T25 11 - VR = 2 V, VR = 25 V, f = 1 MHz |
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Siemens Semiconductor Group |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) 10 V, f = 1 MHz Capacitance ratio CT2/CT10 rs CC Ls 2 - Ω pF nH VR = 2 V, VR = 10 V, f = 1 MHz Series resistance VR = 5 V, f = 470 MHz Case capacitance f = 1 MHz Series inductance Semiconductor Group Semiconductor Group 22 Apr-30-1998 1998- |
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Siemens Semiconductor Group |
Silicon Variable Capacitance Diode (For FM radio tuners with extended frequency band High tuning ratio at low supply voltage (car radio) tio VR = 2 V, 8 V, f = 1 MHz Capacitance matching VR = 2 V, 8 V Series resistance VR = 2 V, f = 100 MHz Q factor VR = 2 V, f = 100 MHz 1) Values typ. max. Unit IR – – CT 43 19.1 CT2 CT8 ∆CT C T rS Q 2.05 – – – 44.75 20.8 2.15 – 0.18 200 46.5 22.7 |
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Siemens Semiconductor Group |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) citance difference C1V-C3V C3V-C4V 0.3 VR = 1 V, VR = 3 V, f = 1 MHz Capacitance difference VR = 3 V, VR = 4 V, f = 1 MHz Series resistance rs CC Ls VR = 1 V, f = 1 GHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor |
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Desde 2024. D4U Semiconductor.
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