Siemens Semiconductor Group HY Hoja de datos

No.	parte #	Fabricante	Descripción
1	BR303	Siemens Semiconductor Group	SILICON MINIATURE THYRISTOR
2	LHT774	Siemens Semiconductor Group	TOPLED RG Super-Bright/ Hyper-Red GaAIAs-LED q q q q q q q q color of package: white double heterojunction in GaAIAs technology superior luminous intensity for use as optical indicator for backlighting, optical coupling into light pipes and lenses suitable for all SMT assembly and soldering me
3	Q62702-B0862	Siemens Semiconductor Group	Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) 1 V, VR = 3 V, f = 1 MHz Series resistance VR = 1 V, f = 1 GHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group Semiconductor Group 22 Au 1998-11-01 -20-1998 BBY 53-02W Diode capacitance CT = f (V R) f = 1MHz 6
4	Q62702-B0911	Siemens Semiconductor Group	Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) 10 V, f = 1 MHz Capacitance ratio CT2/CT10 rs CC Ls 2 - Ω pF nH VR = 2 V, VR = 10 V, f = 1 MHz Series resistance VR = 5 V, f = 470 MHz Case capacitance f = 1 MHz Series inductance Semiconductor Group Semiconductor Group 22 Apr-30-1998 1998-
5	Q62702-B631	Siemens Semiconductor Group	Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) citance difference C1V-C3V C3V-C4V 0.3 VR = 1 V, VR = 3 V, f = 1 MHz Capacitance difference VR = 3 V, VR = 4 V, f = 1 MHz Series resistance rs CC Ls VR = 1 V, f = 1 GHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor
6	Q62702-B792	Siemens Semiconductor Group	Silicon Variable Capacitance Diode (For VHF Hyperband TV/TR tuners High capacitance ratio Low series resistance) 00 nA CT 62 2.65 76 3.1 pF CT1/CT28 22 ∆CT/CT – 2.5 – – % Ω – – – nH – rS Ls Package Outline SOD-323 Dimensions in mm Semiconductor Group 2 BB 641 Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 3
7	Q62702-B912	Siemens Semiconductor Group	Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) 0.25 0.09 0.6 19.3 6.6 3.3 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio CT1/C T3 CT1/C T4 rs CC Ls 2.8 - - VR = 1 V, VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz
8	Q62702-B916	Siemens Semiconductor Group	Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) .3 6.6 3.3 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio CT1/C T3 CT1/C T4 rs CC Ls 2.8 - - VR = 1 V, VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Series resistanc
9	HYB3116160BSJ	Siemens Semiconductor Group	1M x 16-Bit Dynamic RAM 1k & 4k -Refresh include single + 3.3 V (± 0.3 V) power supply, direct interfacing with highperformance logic device families.The HYB3116160BSTL parts have a very low power „sleep mode“ suppported by Self Refresh. Ordering Information Type HYB 3116160BSJ-50 HYB 31161
10	HYB3117800BSJ-50	Siemens Semiconductor Group	2M x 8 - Bit Dynamic RAM 2k Refresh include single + 3.3 V (± 0.3V) power supply, direct interfacing with high-performance logic device families. Ordering Information Type HYB 3117800BSJ-50 HYB 3117800BSJ-60 HYB 3117800BSJ-70 Pin Names A0 to A10 A0 to A9 RAS OE I/O1-I/O8 CAS WE Row Add
11	Q62702-B0860	Siemens Semiconductor Group	Silicon Tuning Diode (High Q hyperband tuning diode Low series inductance)
12	Q62702-B0913	Siemens Semiconductor Group	Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) f = 1 MHz Capacitance ratio CT2/CT10 rs CC Ls 2 - Ω pF nH VR = 2 V, VR = 10 V, f = 1 MHz Series resistance VR = 5 V, f = 470 MHz Case capacitance f = 1 MHz Series inductance Semiconductor Group Semiconductor Group 22 Apr-30-1998 1998-11-01
13	Q62702-B257	Siemens Semiconductor Group	Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V) 10 3.8 – – nA pF – – IR CT 3.4 – CT2 CT20 Q 4.3 400 – – – – – 1.7 – – – – – – 10 nA pF Values typ. max. Unit
14	Q62702-B403	Siemens Semiconductor Group	Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners/ Bd I) 19.5 – – – C T rS LS Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 2
15	Q62702-B599	Siemens Semiconductor Group	Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) = 1 V, f = 1 GHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group 2 Jul-04-1996 BBY 52 Diode capacitance CT = f (VR) f = 1MHz 2.4 pF CD 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 1.0 1.5 2.0 2.5 3.0 V 4.0 VR
16	Q62702-B663	Siemens Semiconductor Group	Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) = 1MHz Series resistance VR = 1 V, f = 1 GHz Case capacitance f = 1 MHz Serien inductance IR 5.3 4.2 3.5 3.1 1.75 1.78 0.50 0.37 0.12 2 10 200 nA CT 4.5 3.4 2.7 2.5 6.1 5.2 4.6 3.7 pF CT1V/CT4V 1.55 2.2 pF C1V-C3V C3V-C4V rs CC Ls 1.4 0.30 -
17	Q62702-B664	Siemens Semiconductor Group	Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) ce rs CC Ls VR = 1 V, f = 1 GHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group 2 Feb-04-1997 BBY 52-03W Diode capacitance CT = f (VR) f = 1MHz 2.4 pF CD 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 1.0 1.5 2.0 2.
18	Q62702-B915	Siemens Semiconductor Group	Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance High capacitance ratio) 1 V, f = 1 MHz VR = 2.5 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio CT1/C T3 CT1/C T4 rs CC Ls 3 - - VR = 1 V, VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Series resistance Ω pF nH VR = 1 V, f
19	LHK376	Siemens Semiconductor Group	Hyper ARGUS LED Hyper-Bright/ 3 mm T1/ TS GaAIAs LED/ Non Diffused q colorless, clear package q double heterojunction in GaAIAs technology, transparent q q q q q q q substrate plasic package with a special design in connection with an additional, custom built reflector suitable for backlighting of display panels fo
20	BR303	Siemens Semiconductor Group	SILICON MINIATURE THYRISTOR