| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Siemens Semiconductor Group |
Silicon Photodiode for the visible spectral range q Especially suitable for applications from 350 nm to 820 nm q Adapted to human eye sensitivity (Vλ) q Hermetically sealed metal package (similar to TO-5) Applications q Exposure meter for daylight q For artificial light of high color temperature in |
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Siemens Semiconductor Group |
NPN-Silizium-Fototransistor Silicon NPN Phototransistor q Especially suitable for applications from 420 nm to 1130 nm q High linearity q TO-18, base plate, transparent epoxy resin lens, with base connection Applications q Computer-controlled flashes q Photointerrupters q Industrial electronics q For contr |
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Siemens Semiconductor Group |
Silicon NPN Phototransistor q Especially suitable for applications from 420 nm to 1130 nm (BP 103 B) and of 880 nm (BP 103 BF) q High linearity q 5 mm LED plastic package q Available in groups Applications q Computer-controlled flashes q Light-reflecting switches for steady and |
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Siemens Semiconductor Group |
Silicon Phototransistor q Especially suitable for applications of 950 nm q Short switching time (typ. 20 ns) q DIL plastic package with high packing density q BP 104 FS: suitable for vapor-phase and IR-reflow soldering Applications q IR remote control of hi-fi and TV sets, |
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Siemens Semiconductor Group |
Silicon Phototransistor q Especially suitable for applications from 400 nm to 1100 nm q Short switching time (typ. 20 ns) q Suitable for vapor-phase and IR-reflow soldering q Suitable for SMT Applications q Photointerrupters q IR remote controls q Industrial electronics q F |
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Siemens Semiconductor Group |
NPN-Silizium-Fototransistor Zeilen Silicon NPN Phototransistor Arrays q Especially suitable for applications from 440 nm to 1070 nm q High linearität q Multiple-digit array package of transparent epoxy q Available in groups Applications q q q q Wechsellichtbetrieb q Lochstreifenleser q Industrieelektronik q “Messen/St |
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Siemens Semiconductor Group |
Silicon Phototransistor q Especially suitable for applications of 950 nm q Short switching time (typ. 20 ns) q DIL plastic package with high packing density q BP 104 FS: suitable for vapor-phase and IR-reflow soldering Applications q IR remote control of hi-fi and TV sets, |
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Siemens Semiconductor Group |
Silizium-Fotodiode/ Silicon Photodiode q Especially suitable for applications from 350 nm to 1100 nm q Low reverse current (typ. 20 pA) q DIL plastic package with high packing density Applications q Exposure meters q Color analysis Typ Type BPW 33 Bestellnummer Ordering Code Q62702-P7 |
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Siemens Semiconductor Group |
Silicon PIN Photodiode q Especially suitable for applications from 400 nm to 1100 nm q Short switching time (typ. 20 ns) q DIL plastic package with high packing density q BPW 34 S/(E9087): suitable for vapor-phase and IR-reflow soldering (JEDEC level 4) Applications q Phot |
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Siemens Semiconductor Group |
NPN-Silizium-Fototransistor Silicon NPN Phototransistor q Especially suitable for applications from 450 nm to 1120 nm q High linearity q Hermetically sealed metal package (TO-18) with base connection, suitable up to 125 °C1) q Available in groups Applications q Photointerrupters q Industrial electronics q |
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Siemens Semiconductor Group |
NPN-Silizium-Fototransistor Zeilen Silicon NPN Phototransistor Arrays q Especially suitable for applications from 440 nm to 1070 nm q High linearität q Multiple-digit array package of transparent epoxy q Available in groups Applications q q q q Wechsellichtbetrieb q Lochstreifenleser q Industrieelektronik q “Messen/St |
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Siemens Semiconductor Group |
NPN-Silizium-Fototransistor Zeilen Silicon NPN Phototransistor Arrays q Especially suitable for applications from 440 nm to 1070 nm q High linearität q Multiple-digit array package of transparent epoxy q Available in groups Applications q q q q Wechsellichtbetrieb q Lochstreifenleser q Industrieelektronik q “Messen/St |
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Siemens Semiconductor Group |
Silicon PIN Photodiode q Especially suitable for applications from 400 nm to 1100 nm q Short switching time (typ. 20 ns) q DIL plastic package with high packing density q BPW 34 S/(E9087): suitable for vapor-phase and IR-reflow soldering (JEDEC level 4) Applications q Phot |
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Siemens Semiconductor Group |
Silicon PIN Photodiode q Especially suitable for applications of 950 nm q Short switching time (typ. 20 ns) q DIL plastic package with high packing density q BPW 34 FS/(E9087); suitable for vaporphase and IR-reflow soldering Applications q IR remote control of hi-fi and TV |
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Siemens Semiconductor Group |
Silizium-PIN-Fotodiode Silicon PIN Photodiode q Especially suitable for applications from 400 nm to 1100 nm q Short switching time (typ. 20 ns) q Hermetically sealed metal package (similar to TO-5) Application q q q q Wechsellichtbetrieb q IR-Fernsteuerungen q Industrieelektronik q “Messen/Steu |
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Siemens Semiconductor Group |
NPN-Silizium-Fototransistor Silicon NPN Phototransistor q Especially suitable for applications from 440 nm to 1070 nm q High linearity q One-digit array package of transparent epoxy q Available in groups Applications q q q q Wechsellichtbetrieb q Industrieelektronik q “Messen/Steuern/Regeln” Computer-co |
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Siemens Semiconductor Group |
NPN-Silizium-Fototransistor Zeilen Silicon NPN Phototransistor Arrays q Especially suitable for applications from 440 nm to 1070 nm q High linearität q Multiple-digit array package of transparent epoxy q Available in groups Applications q q q q Wechsellichtbetrieb q Lochstreifenleser q Industrieelektronik q “Messen/St |
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Siemens Semiconductor Group |
NPN-Silizium-Fototransistor Zeilen Silicon NPN Phototransistor Arrays q Especially suitable for applications from 440 nm to 1070 nm q High linearität q Multiple-digit array package of transparent epoxy q Available in groups Applications q q q q Wechsellichtbetrieb q Lochstreifenleser q Industrieelektronik q “Messen/St |
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Siemens Semiconductor Group |
Silicon PIN Photodiode q Especially suitable for applications from 350 nm to 1100 nm q Short switching time (typ. 25 ns) q DIL plastic package with high packing density q SMT version on request Applications q Photointerrupters q Industrial electronics q For control and dri |
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Siemens Semiconductor Group |
Silicon PIN Photodiode q Especially suitable for the wavelength range of 830 nm to 880 nm q Short switching time (typ. 20 ns) q DIL plastic package with high packing density q BPW 34 FAS/(E9087): Suitable for vapor-phase and IR-reflow soldering Applications q IR-remote con |
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Desde 2024. D4U Semiconductor.
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