| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Siemens Semiconductor Group |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) Ω) Insertion power gain |S21| 2 ∆ |S 21|2 18 16 12 +-0.7 typ. max. Unit dB f = 0.1 GHz f = 1 GHz f = 1.8 GHz Insertion point gain flatness f = 0.1 GHz to 0.6 GHz Noise figure NF 3.5 4 5 12 14 10 dBm dB f = 0.1 GHz f = 1 GHz f = 2 GHz 1dB compr |
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Siemens Semiconductor Group |
Si-MMIC-Amplifier d on the emitter (GND) lead at the soldering point to the pcb Semiconductor Group Semiconductor Group 11 Au 1998-11-01 -11-1998 BGA 427 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values min. AC characteri |
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Siemens Semiconductor Group |
Silicon Switching Diode Array ecovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA Test circuit for reverse recovery time CD trr – – – – 1.5 6 pF ns VF IR – – – – 0.2 100 – – 1.3 V µA Values typ. max. Unit Pulse generator: tp = 100 ns, D = 0.05 tr = 0.6 ns, Rj |
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Siemens Semiconductor Group |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) 50 Ω) Insertion power gain |S21| 2 ∆ |S 21|2 10 9 8 +-0.5 typ. max. Unit dB f = 0.1 GHz f = 1 GHz f = 1.8 GHz Insertion point gain flatness f = 0.1 GHz to 0.6 GHz Noise figure NF 6 6.5 7 9 20 15 dBm dB f = 0.1 GHz f = 1 GHz f = 2 GHz 1dB compre |
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Siemens Semiconductor Group |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) 0 Ω) Insertion power gain |S21| 2 ∆ |S 21|2 12 11 10 +-0.6 typ. max. Unit dB f = 0.1 GHz f = 1 GHz f = 1.8 GHz Insertion point gain flatness f = 0.1 GHz to 0.6 GHz Noise figure NF 5.5 6 7 9 20 14 dBm dB f = 0.1 GHz f = 1 GHz f = 2 GHz 1dB compr |
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Siemens Semiconductor Group |
Si-MMIC-Amplifierin e pcb Semiconductor Group Semiconductor Group 11 Jul-13-1998 1998-11-01 BGA 420 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values min. AC characteristics Device current Insertion power gain f = 0.1 GHz f |
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Siemens Semiconductor Group |
Si-MMIC-Amplifier emperature Thermal Resistance Junction - soldering point RthJS ≤ tbd K/W 1) TS is measured on the ground lead at the soldering point to the pcb Semiconductor Group Semiconductor Group 11 Jul-14-1998 1998-11-01 BGA 425 Electrical Characteristi |
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Desde 2024. D4U Semiconductor.
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