Siemens Semiconductor Group BA Hoja de datos

No.	parte #	Fabricante	Descripción
1	BAT15-S	Siemens Semiconductor Group	Silicon Schottky Diode 10 S BAT 15-020 S BAT 15-050 S BAT 15-090 S BAT 15-110 S FSSB – – – – rf BAT 15-020 S BAT 15-050 S BAT 15-090 S BAT 15-110 S – – – – 3.5 4.0 7.0 10.0 – – – – 6.0 6.5 6.5 7.0 – – – – Ω – – – – – – – – 0.26 0.28 0.30 0.31 0.35 0.39 0.44 0.45 – – – – –
2	BAT32	Siemens Semiconductor Group	Silicon Schottky Diode rd current IF = f (VF)
3	BFT12	Siemens Semiconductor Group	NPN SILICON RF BROADBAND TRANSISTOR
4	BAR63-05W	Siemens Semiconductor Group	Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) . Parameter Symbol Values min. DC characteristics Breakdown voltage typ. 0.95 max. 50 1.2 Unit V(BR) IR VF 50 - V µA mV I (BR) = 5 µA Reverse current VR = 20 V Forward voltage I F = 100 mA AC characteristics Diode capacitance CT 0.3 0.21 1.2
5	BAS28W	Siemens Semiconductor Group	Silicon Switching Diode Array F = 10 mA I F = 50 mA I F = 150 mA Reverse current - - 715 855 1000 1250 1 µA IR IR - VR = 75 V Reverse current VR = 25 V, TA = 150 °C VR = 75 V, TA = 150 °C AC characteristics Diode capacitance - - 30 50 CD trr - - 2 6 pF ns VR = 0
6	BAT14	Siemens Semiconductor Group	HiRel Silicon Schottky Diode ¥ HiRel Discrete and Microwave Semiconductor ¥ Medium barrier diodes for detector and mixer applications ¥ Hermetically sealed microwave package ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5106/014 ESD: Electrostatic discharge sensitive device, observe h
7	BAT15-124	Siemens Semiconductor Group	Silicon Schottky Diode ltage IF = 1 mA BAT 15-014 BAT 15-044 BAT 15-074 BAT 15-104 BAT 15-124 IF = 10 mA BAT 15-014 BAT 15-044 BAT 15-074 BAT 15-104 BAT 15-124 Diode capacitance f = 1 MHz, VR = 0 BAT 15-014 BAT 15-044 BAT 15-074 BAT 15-104 BAT 15-124 Case capacitance Noise
8	BAT18	Siemens Semiconductor Group	Silicon RF Switching Diode 2 20 200 1 0.7 – pF Ω nH – Values typ. 0.38 max. 1.2 V nA Unit Diode capacitance CT = f (VR) f = 1 MHz Forward resistance rf = f (IF) f = 100 MHz Semiconductor Group 2
9	BAT30	Siemens Semiconductor Group	silicon schottky diode
10	BA586	Siemens Semiconductor Group	Silicon PIN Diode – – 10 – – µS Values typ. – – max. 1.15 50 – – Unit V nA pF 0.23 0.2 0.35 – Ω nH Diode capacitance CT = f (VR) f = 1 MHz / f = 100 MHz Forward resistance rf = f (IF) f = 100 MHz
11	Q28000-A4668	Siemens Semiconductor Group	NPN SILICON TRANSISTOR FOR LOW-NOISE RF BROADBAND AMPLIFIERS
12	Q62702-B63	Siemens Semiconductor Group	NPN SILICON EPIBASE TRANSISTORS
13	Q62702-B63	Siemens Semiconductor Group	PNP SILICON EPIBASE TRANSISTORS
14	BD617	Siemens Semiconductor Group	NPN SILICON EPIBASE TRANSISTORS
15	BAL74	Siemens Semiconductor Group	Silicon Switching Diode everse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA Test circuit for reverse recovery time CD trr – – – – 2 4 pF ns V(BR) VF IR – – – – 0.1 100 µA µA Values typ. max. Unit 50 – – – – 1 V Pulse generator: tp = 100 ns,
16	BAL99	Siemens Semiconductor Group	Silicon Switching Diode (For high-speed switching) characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA CD trr – – – – 1.5 6 pF ns V(BR) VF – – – – IR – – – – – – 2.5 30 50 – – – – 715 855 1 1.25 mV mV V V µA Values typ.
17	BAR63	Siemens Semiconductor Group	Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) cified. Parameter Symbol min. Value typ. max. Unit DC characteristics Breakdown voltage IR = 5 µA Reverse leakage VR = 20 V Forward voltage IF = 100 mA Diode capacitance VR = 0 V, f = 100 MHz Diode capacitance VR = 5 V, f = 1 MHz Forward resista
18	BAR64-04	Siemens Semiconductor Group	Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) Edition A01, 23.02.95 BAR 64... Electrical characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol min. Value typ. max. Unit DC characteristics per diode Breakdown voltage IR = 5 µA Forward voltage IF = 50 mA Diode capacit
19	BAS125W	Siemens Semiconductor Group	Preliminary data Silicon Schottky Diodes Junction - soldering point, BAS125-04W...06W 1) Package mounted on alumina 15mm x 16.7mmm x 0.7mm Semiconductor Group 1 Dec-20-1996 BAS 125W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristi
20	BAS78A	Siemens Semiconductor Group	Silicon Switching Diodes (Switching applications High breakdown voltage) otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage I(BR) = 100 µA V(BR) BAS 78 A BAS 78 B BAS 78 C BAS 78 D VF – – IR – – – – 1 50 – – 1.6 2 µA Values typ. max. Unit V 50 100 200 400 – – – – – – – – Forward voltage1)