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Siemens HYB DataSheet

No. parte # Fabricante Descripción Hoja de Datos
1
HYB5117400BJ-50

Siemens
4M x 4-Bit Dynamic RAM 2k & 4k Refresh
s) and LV-TTL (3.3 V version)-compatible
• Plastic Package: P-SOJ-26/24-1 300 mil P-TSOPII-26/24-1 300 mil Semiconductor Group 1 1998-10-01 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/-60 4M × 4 DRAM The HYB 5(3)116(7)400 are 16 MBit dynamic R
Datasheet
2
HYB514800BJ

Siemens
512kx8-Bit Dynamic RAM
include single + 5 V ( ± 10 %) power supply, direct interfacing with high performance logic device families such as Schottky TTL. Pin Definitions and Functions A0-A8,A9R RAS CAS WRITE OE IO1 - IO8 N.C. Address Input Row Address Strobe Column Address
Datasheet
3
HYB3116160BSJ

Siemens Semiconductor Group
1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
include single + 3.3 V (± 0.3 V) power supply, direct interfacing with highperformance logic device families.The HYB3116160BSTL parts have a very low power „sleep mode“ suppported by Self Refresh. Ordering Information Type HYB 3116160BSJ-50 HYB 31161
Datasheet
4
HYB3117800BSJ-50

Siemens Semiconductor Group
2M x 8 - Bit Dynamic RAM 2k Refresh
include single + 3.3 V (± 0.3V) power supply, direct interfacing with high-performance logic device families. Ordering Information Type HYB 3117800BSJ-50 HYB 3117800BSJ-60 HYB 3117800BSJ-70 Pin Names A0 to A10 A0 to A9 RAS OE I/O1-I/O8 CAS WE Row Add
Datasheet
5
HYB514256BJL-50

Siemens
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL. These HYB 514256BL/BJL are specially selected for battery backup applications. Pin Definitions and Functions Pin No. A0-A
Datasheet
6
HYB3116160BST-50

Siemens Semiconductor Group
1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
include single + 3.3 V (± 0.3 V) power supply, direct interfacing with highperformance logic device families.The HYB3116160BSTL parts have a very low power „sleep mode“ suppported by Self Refresh. Ordering Information Type HYB 3116160BSJ-50 HYB 31161
Datasheet
7
HYB3116400BJ-70

Siemens Semiconductor Group
3.3V 4M x 4-Bit Dynamic RAM
include single + 3.3 V (± 0.3 V) power supply, direct interfacing with high-performance logic device families.The HYB3116400BTL parts have a very low power „sleep mode“ supported by Self Refresh. Ordering Information Type HYB 3117400BJ-50 HYB 311740
Datasheet
8
HYB3116405BT-50

Siemens Semiconductor Group
4M x 4-Bit Dynamic RAM 2k & 4k Refresh
include single + 3.3 V (± 0.3 V) power supply, direct interfacing with high-performance logic device families.The HYB3116405BTL parts have a very low power „sleep mode“ supported by Self Refresh. Ordering Information Type HYB 3117405BJ-50 HYB 311740
Datasheet
9
HYB314171BJ-50

Siemens Semiconductor Group
3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
include Self Refresh (LVersion), single + 3.3 V (± 0.3 V) power supply, direct interfacing with high performance logic device families. Semiconductor Group 1 7.96 HYB 314171BJ/BJL-50/-60/-70 3.3V 256 K x 16-DRAM Ordering Information Type HYB 314
Datasheet
10
HYB314175BJ-50-

Siemens Semiconductor Group
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
include Self Refresh (L-Version), single + 3.3 V (± 0.3 V) power supply, direct interfacing with high performance logic device families. Semiconductor Group 1 7.96 HYB 314175BJ/BJL-50/-55/-60 3.3V 256K x 16 EDO-DRAM Ordering Information Type HYB
Datasheet
11
HYB3164405TL-50

Siemens Semiconductor Group
16M x 4-Bit Dynamic RAM
addresses (HYB 3164405J/T(L)) 4096 refresh cycles/ 64 ms , 12 R/ 12C addresses (HYB 3165405J/T(L)) Plastic Package: P-SOJ-34-1 500 mil HYB 3164(5)400J P-TSOPII-34-1 500 mil HYB 3164(5)400T Semiconductor Group 89 HYB3164(5)405J/T(L)-50/-60 16M x 4-
Datasheet
12
HYB3165400AT-50

Siemens Semiconductor Group
16M x 4-Bit Dynamic RAM
8192 refresh cycles/128 ms , 13 R/ 11C addresses (HYB 3164400AJ/AT) 4096 refresh cycles/ 64 ms , 12 R/ 12C addresses (HYB 3165400AJ/AT)
• 256 msec refresh period for L-versions

• Plastic Package P-SOJ-32-1 400 mil P-TSOPII-32-1 400 mil HYB 3164(5
Datasheet
13
HYB41256-12

Siemens
262/144 BIT DYNAMIC RAM
Datasheet
14
HYB511000BJ-60

Siemens
1 M x 1-Bit Dynamic RAM Low Power 1 M 1-Bit Dynamic RAM
include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL. “Test Mode” function is implemented. The HYB 511000BJL are specially selected for low power battery backup applications.
Datasheet
15
HYB5116400BT-60

Siemens
4M x 4-Bit Dynamic RAM
include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL. Ordering Information Type HYB 5116400BJ-50 HYB 5116400BJ-60 HYB 5116400BJ-70 HYB 5116400BT-50 HYB 5116400BT-60 HYB 511640
Datasheet
16
HYB5116405BT-70

Siemens
4M x 4-Bit Dynamic RAM 2k & 4k Refresh
include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL. Ordering Information Type HYB 5116405BJ-50 HYB 5116405BJ-60 HYB 5116405BJ-70 HYB 5116405BT-50 HYB 5116405BT-60 HYB 511640
Datasheet
17
HYB5117800BSJ-60

Siemens
2M x 8-Bit Dynamic RAM
e die revisions “G” & “F” and organized as 2 097 152 words by 8-bits. The HYB 5(3)117800 utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide operating margins, both internally and for the
Datasheet
18
HYB514100BJ-50

Siemens
4M x 1-Bit Dynamic RAM
include single + 5 V (± 10 %) power supply, direct interfacing with high performance logic device families such as Schottky TTL. Type HYB 514100BJ-50 HYB 514100BJ-60 Ordering Code Q67100-Q971 Q67100-Q759 Package P-SOJ-26/20-2 300 mil P-SOJ-26/20-2 30
Datasheet
19
HYB514256BJ-70

Siemens
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL. These HYB 514256BL/BJL are specially selected for battery backup applications. Pin Definitions and Functions Pin No. A0-A
Datasheet
20
HYB3116160BST-60

Siemens Semiconductor Group
1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
include single + 3.3 V (± 0.3 V) power supply, direct interfacing with highperformance logic device families.The HYB3116160BSTL parts have a very low power „sleep mode“ suppported by Self Refresh. Ordering Information Type HYB 3116160BSJ-50 HYB 31161
Datasheet



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