Siemens Group BB6 Hoja de datos

No.	parte #	Fabricante	Descripción
1	BB639C	Siemens Group	Silicon Variable Capacitance Diode (For tuning of extended frequency band in VHF TV / VTR tuners) 13.5 ∆CT/CT - VR = 1 V, VR = 28 V, f = 1 MHz Capacitance matching % Ω nH VR = 1 V, VR = 28 V, f = 1 MHz Series resistance rs Ls VR = 5 V, f = 470 MHz Series inductance 1) In-line matching. For details please refer to Application Note 047 Semico
2	BB641	Siemens Group	Silicon Variable Capacitance Diode (For VHF Hyperband TV/TR tuners High capacitance ratio Low series resistance) 00 nA CT 62 2.65 76 3.1 pF CT1/CT28 22 ∆CT/CT – 2.5 – – % Ω – – – nH – rS Ls Package Outline SOD-323 Dimensions in mm Semiconductor Group 2 BB 641 Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 3
3	BB619	Siemens Group	Silicon Variable Capacitance Diode (For tuning of extended frequency bands in VHF TV/VTR tuners) 2 max. Unit nA 10 200 pF 42 2.9 – 2.5 – – – % Ω nH 13.5 – – – CT rs Ls Semiconductor Group 2
4	BB619C	Siemens Group	Silicon Variable Capacitance Diode (For tuning of extended frequency band in VHF TV/ VTR tuners) f = 1 MHz Capacitance ratio CT1/CT28 13.5 ∆CT/CT 2.5 Ω nH % VR = 1 V, VR = 28 V, f = 1 MHz Capacitance matching VR = 28 V, f = 1 MHz Series resistance rs Ls VR = 5 V, f = 470 MHz Series inductance Semiconductor Group 2 Jan-08-1997 BB 619C D
5	BB620	Siemens Group	Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners / Bd I) 19.5 – – – C T rS LS Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 2
6	BB639	Siemens Group	Silicon Variable Capacitance Diode (For tuning of extended frequency bands in VHF TV/VTR tuners) 2.9 pF CT1/CT28 13.5 ∆CT/CT – 2.5 – – % Ω – – – nH – rS LS Semiconductor Group 2 BB 639 Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 3
7	BB640	Siemens Group	Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners / Bd I) Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 2
8	BB644	Siemens Group	Silicon Variable Capacitance Diode (For VHF TV-tuners High capacitance ratio Low series inductance) 2.4 41.8 31.85 27 2.55 11.8 16.4 0.6 1.8 44.5 34.2 2.85 2.75 12.5 17.5 2 0.75 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2/C T25 11 - VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ra
9	BB659	Siemens Group	Silicon Tuning Diode (For VHF-TV-tuners High capacitance ratio Low series inductance Low series resistance) 14.7 40 32 3.2 2.9 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2/C T25 9.8 - VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ratio CT1/C T28 13.5 ∆CT/C T - VR = 1 V, VR = 28 V, f = 1 M
10	BB659C	Siemens Group	Silicon Variable Capacitance Diode (For VHF-TV-tuners High capacitance ratio Low series inductance Low series resistance) 2 2.72 2.55 11.1 15.3 42 33.2 3.05 2.8 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2/C T25 9.5 - VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ratio CT1/C T28 13.5 ∆CT/C T - VR = 1 V
11	BB664	Siemens Group	Silicon Variable Capacitance Diode (For VHF TV-tuners High capacitance ratio Low series inductance Low series resistance) T 39 29.4 2.5 2.4 41.8 31.85 2.7 2.55 11.8 16.4 0.6 0.6 44.5 34.2 2.85 2.75 12.5 17.5 2 0.75 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2/C T25 11 - VR = 2 V, VR = 25 V, f = 1 MHz
12	BB669	Siemens Group	Silicon Tuning Diode (For VHF 2-Band-hyperband-TV-tuners Very high capacitance ratio Low series resistance) 23.3 2 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2/C T25 14.5 CT1/C T28 ∆CT/C T 18 - - VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz Capacitance
13	BB689	Siemens Group	Silicon Tuning Diode (For VHF 2-Band-hyperband-TV-tuners Very high capacitance ratio Low series inductance Low series resistance) T 51 39.6 2.6 2.5 56.5 43.4 2.8 2.7 15.5 20.9 0.85 0.6 61.5 47.2 3 2.9 17 23.2 2 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2 /CT25 CT1 /CT28 ∆CT/CT 14.5 18 - - VR = 2 V, VR = 25 V