| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Siemens |
BSTxxx |
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Siemens |
BSTxxx |
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Siemens Semiconductors |
Silicon Controlled Rectifier |
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Siemens |
(BSTx6xxx) Silicon Controlled Rectifier |
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Siemens Semiconductor Group |
1M x 16-Bit Dynamic RAM 1k & 4k -Refresh include single + 3.3 V (± 0.3 V) power supply, direct interfacing with highperformance logic device families.The HYB3116160BSTL parts have a very low power „sleep mode“ suppported by Self Refresh. Ordering Information Type HYB 3116160BSJ-50 HYB 31161 |
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Siemens |
(BSTx6xxx) Silicon Controlled Rectifier |
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Siemens |
(BSTx6xxx) Silicon Controlled Rectifier |
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Siemens Semiconductor Group |
1M x 16-Bit Dynamic RAM 1k & 4k -Refresh include single + 3.3 V (± 0.3 V) power supply, direct interfacing with highperformance logic device families.The HYB3116160BSTL parts have a very low power „sleep mode“ suppported by Self Refresh. Ordering Information Type HYB 3116160BSJ-50 HYB 31161 |
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Siemens Semiconductor Group |
1M x 16-Bit Dynamic RAM 1k & 4k -Refresh include single + 3.3 V (± 0.3 V) power supply, direct interfacing with highperformance logic device families.The HYB3116160BSTL parts have a very low power „sleep mode“ suppported by Self Refresh. Ordering Information Type HYB 3116160BSJ-50 HYB 31161 |
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Siemens Semiconductor Group |
1M x 16-Bit Dynamic RAM 1k & 4k -Refresh include single + 3.3 V (± 0.3 V) power supply, direct interfacing with highperformance logic device families.The HYB3116160BSTL parts have a very low power „sleep mode“ suppported by Self Refresh. Ordering Information Type HYB 3116160BSJ-50 HYB 31161 |
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Siemens |
1M x 16-Bit Dynamic RAM 1k Refresh T-50/-60 HYB 3118165BSJ/BST-50/-60 1M × 16 EDO-DRAM The HYB 5(3)118165 are 16 MBit dynamic RAMs based on die revisions “G” & “F” and organized as 1 048 576 words by 16-bits. The HYB 5(3)118165 utilizes a submicron CMOS silicon gate process technology |
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Siemens |
1M x 16-Bit Dynamic RAM 1k Refresh T-50/-60 HYB 3118165BSJ/BST-50/-60 1M × 16 EDO-DRAM The HYB 5(3)118165 are 16 MBit dynamic RAMs based on die revisions “G” & “F” and organized as 1 048 576 words by 16-bits. The HYB 5(3)118165 utilizes a submicron CMOS silicon gate process technology |
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Siemens |
BSTxxx |
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Siemens Semiconductors |
(BSTP3xxxx) Silicon Controlled Rectifier |
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Siemens Semiconductors |
(BSTP3xxxx) Silicon Controlled Rectifier |
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Siemens Semiconductors |
(BSTP3xxxx) Silicon Controlled Rectifier |
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Siemens Semiconductors |
(BSTP3xxxx) Silicon Controlled Rectifier |
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Siemens Semiconductors |
(BSTP3xxxx) Silicon Controlled Rectifier |
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Siemens Semiconductors |
(BSTP3xxxx) Silicon Controlled Rectifier |
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Siemens Semiconductors |
(BSTP3xxxx) Silicon Controlled Rectifier |
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Desde 2024. D4U Semiconductor.
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