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Siemens Semiconductor Group |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) = 1MHz Series resistance VR = 1 V, f = 1 GHz Case capacitance f = 1 MHz Serien inductance IR 5.3 4.2 3.5 3.1 1.75 1.78 0.50 0.37 0.12 2 10 200 nA CT 4.5 3.4 2.7 2.5 6.1 5.2 4.6 3.7 pF CT1V/CT4V 1.55 2.2 pF C1V-C3V C3V-C4V rs CC Ls 1.4 0.30 - |
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Siemens Semiconductor Group |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) ce rs CC Ls VR = 1 V, f = 1 GHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group 2 Feb-04-1997 BBY 52-03W Diode capacitance CT = f (VR) f = 1MHz 2.4 pF CD 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 1.0 1.5 2.0 2. |
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Siemens |
Accessories culation of saturation current N27 Validity range: K3 (25 ˚C) 214 K4 (25 ˚C) – 0,847 K3 (100 ˚C) K4 (100 ˚C) 198 – 0,865 K1, K2: 0,10 mm < s < 2,50 mm K3, K4: 70 nH < AL < 680 nH Siemens Matsushita Components 532 EC 35/17/10 Accessories B6627 |
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Siemens |
Accessories culation of saturation current N27 Validity range: K3 (25 ˚C) 214 K4 (25 ˚C) – 0,847 K3 (100 ˚C) K4 (100 ˚C) 198 – 0,865 K1, K2: 0,10 mm < s < 2,50 mm K3, K4: 70 nH < AL < 680 nH Siemens Matsushita Components 532 EC 35/17/10 Accessories B6627 |
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Siemens |
Accessories culation of saturation current N27 Validity range: K3 (25 ˚C) 214 K4 (25 ˚C) – 0,847 K3 (100 ˚C) K4 (100 ˚C) 198 – 0,865 K1, K2: 0,10 mm < s < 2,50 mm K3, K4: 70 nH < AL < 680 nH Siemens Matsushita Components 532 EC 35/17/10 Accessories B6627 |
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Siemens |
Accessories culation of saturation current N27 Validity range: K3 (25 ˚C) 214 K4 (25 ˚C) – 0,847 K3 (100 ˚C) K4 (100 ˚C) 198 – 0,865 K1, K2: 0,10 mm < s < 2,50 mm K3, K4: 70 nH < AL < 680 nH Siemens Matsushita Components 532 EC 35/17/10 Accessories B6627 |
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Siemens Group |
Silicon Variable Capacitance Diode (For VHF TV-tuners High capacitance ratio Low series inductance Low series resistance) T 39 29.4 2.5 2.4 41.8 31.85 2.7 2.55 11.8 16.4 0.6 0.6 44.5 34.2 2.85 2.75 12.5 17.5 2 0.75 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2/C T25 11 - VR = 2 V, VR = 25 V, f = 1 MHz |
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Siemens Group |
Silicon Tuning Diode (For VHF 2-Band-hyperband-TV-tuners Very high capacitance ratio Low series resistance) 23.3 2 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2/C T25 14.5 CT1/C T28 ∆CT/C T 18 - - VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz Capacitance |
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Desde 2024. D4U Semiconductor.
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