| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Shindengen |
Power MOSFET ・N-channel ・SMD ・Low Ron ・4.5V Gate Drive ・Low Capacitance ・Based on AEC-Q101 ・Halogen free ・Pb free terminal ・RoHS:Yes OUTLINE Package (House Name): FB Package (JEDEC Code): TO-252AA Equivalent circuit Absolute Maximum Ratings (unless otherwise spe |
|
|
|
|
Shindengen |
Power MOSFET ・N-channel ・SMD ・Low Ron ・10V Gate Drive ・Low Capacitance ・Pb free terminal ・RoHS:Yes OUTLINE Package (House Name): FB Package (JEDEC Code): TO-252AA Equivalent circuit Absolute Maximum Ratings (unless otherwise specified : Tc=25℃) Item Symbol C |
|
|
|
|
Shindengen |
Power MOSFET ・N-channel ・SMD ・Low Ron ・4.5V Gate Drive ・Low Capacitance ・Based on AEC-Q101 ・Halogen free ・Pb free terminal ・RoHS:Yes OUTLINE Package (House Name): FB Package (JEDEC Code): TO-252AA Equivalent circuit Absolute Maximum Ratings (unless otherwise sp |
|
|
|
|
Shindengen |
Power MOSFET ・N-channel ・SMD ・Low Ron ・4.5V Gate Drive ・Low Capacitance ・Pb free terminal ・RoHS:Yes OUTLINE Package (House Name): FB Package (JEDEC Code): TO-252AA Equivalent circuit Absolute Maximum Ratings (unless otherwise specified : Tc=25℃) Item Symbol |
|
|
|
|
Shindengen |
2SB1284 .1 0.01 10-5 10-4 10-3 10-2 10-1 100 101 102 Time t [s] 2SB1284 Forward Bias SOA -15 10ms -10 DC 1ms 150µs PT limit -1 IS/B limit -0.1 Collector Current IC [A] Tc = 25°C Single Pulse -0.01-1 -10 Collector-Emitter Voltage VCE [V] |
|
|
|
|
SHINDENGEN |
Power MOSFET ・N-channel ・SMD ・Low Ron ・10V Gate Drive ・Low Capacitance ・Pb free terminal ・RoHS:Yes OUTLINE Package (House Name): FB Package (JEDEC Code): TO-252AA Equivalent circuit Absolute Maximum Ratings (unless otherwise specified : Tc=25℃) Item Symbol C |
|
|
|
|
Shindengen Electric Mfg.Co.Ltd |
Darlington Transistor itter Saturation V (sat)I Voltage = -2mA Max -2.0 V B Thermal Resistance BE ƒÆjc Junction to case Max 5.0 •Ž/W Transition Frequency fT V = 10V, = -0.4A I TYP 20 MHz CE C Turn on Time ton Max 1 I = -1A C Storage Time =B2 I = -2mA ts I Max 4 ƒÊs B1 R = |
|
|
|
|
Shindengen Electric Mfg.Co.Ltd |
Darlington Transistor er Saturation V (sat)I Voltage = -5mA Max -2.0 V B Thermal Resistance BE ƒÆjc Junction to case Max 4.16 •Ž/W Transition Frequency fT V = 10V, = 0.7A I TYP 20 MHz CE C Turn on Time ton Max 1 I = -3A C Storage Time =B2 I = -5mA ts I Max 4 ƒÊs B1 R = 10 |
|
|
|
|
Shindengen Electric Mfg.Co.Ltd |
Darlington Transistor Emitter Saturation V (sat)I Voltage = -10mA Max -2.0 V B Thermal Resistance BE ƒÆjc Junction to case Max 3.57 •Ž/W Transition Frequency fT V = 10V, = -1A I TYP 20 MHz CE C Turn on Time ton Max 1 I = -5A C Storage Time =B2 I = -10mA ts I Max 4 ƒÊs B1 |
|
|
|
|
Shindengen Electric Mfg.Co.Ltd |
Darlington Transistor -100V VCE = -100V VEB = -7V VCE = -3V, IC = -10A IC = -10A IB = -20mA Junction to case VCE = 10V, IC = -1.5A IC = -15A IB1 = IB2 = -20mA RL = 2Ω VBB2 = -4V VCE(sat) VBE(sat) θjc fT ton ts tf V V ℃/W MHz μs Copyright & Copy;2000 Shindengen Electr |
|
Desde 2024. D4U Semiconductor.
|