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SHANTOU HUASHAN |
NPN SILICON TRANSISTOR CE(sat)3 VBE(sat)1 VBE(sat)2 fT tON tSTG tF ¨€ IC=5mA, IB=0 VCE=5V, IC=0.5A VCE=2V, IC=1A ¦Ì A VEB=9V, IC=0 DC Current Gain DC Current Gain Collector- Emitter Saturation Voltage Collector- Emitter Saturation Voltage Collector- Emitter Saturation V |
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SHANTOU HUASHAN |
NPN SILICON TRANSISTOR 0 8 40 40 0.5 0.6 1 V mA IC=10mA, IB=0 VEB=9V, IC=0 VCE=5V, IC=1A VCE=5V, IC=2A VCE(sat) Collector- Emitter Saturation Voltage V V V V V pF MHz IC=1A, IB =0.2A IC=2A, IB =0.5A IC=4A, IB =1A IC=1A, IB =0.2A IC=2A, IB =0.5A VCB=10V, f=0.1MHz VCE= |
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Shantou Huashan |
NPN Silicon Transistor ) Cob fT tON tSTG tF IC=10mA, IB=0 VEB=9V, IC=0 VCE=5V, IC=2A VCE=5V, IC=5A DC Current Gain Collector- Emitter Saturation Voltage 10 5 40 30 1 2 3 V V V V V pF 1.6 3 0.7 uS uS uS IC=2A, IB =400mA IC=5A, IB =1A IC=8A, IB =2A IC=2A, IB =0.4A IC=5A |
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SHANTOU HUASHAN |
NPN SILICON TRANSISTOR V pF MHz IC=1A, IB=0.2A IC=2A, IB=0.5A IC=4A, IB=1A IC=1A, IB=0.2A IC=2A, IB=0.5A VCB=10V, f=0.1MHz VCE=10V, IC=0.5A VCC=125V, IC=2A, IB1=-IB2=0.4A RL=125Ω VBE(sat) Base- Emitter Saturation Voltage Cob fT tON tS tF Output Capacitance Current Gain- |
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SHANTOU HUASHAN |
NPN SILICON TRANSISTOR V V V V pF MHz μs μs μs IC=1A, IB=0.2A IC=2A, IB=0.5A IC=4A, IB=1A IC=1A, IB=0.2A IC=2A, IB=0.5A VCB=10V, f=0.1MHz VCE=10V, IC=0.5A VCC=125V, IC=2A, IB1=-IB2=0.4A VBE(sat) Base- Emitter Saturation Voltage Cob fT tON tS tF Output Capacitance Current |
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SHANTOU HUASHAN |
NPN SILICON TRANSISTOR 10 5 40 30 1 2 3 V mA IC=10mA, IB=0 VEB=9V, IC=0 VCE=5V, IC=2A VCE=5V, IC=5A VCE(sat) Collector- Emitter Saturation Voltage V V V V V pF MHz IC=2A, IB =0.4A IC=5A, IB =1A IC=8A, IB =2A IC=2A, IB =0.4A IC=5A, IB =1A VCB=10V, f=0.1MHz VCE=10V, I |
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SHANTOU HUASHAN |
NPN SILICON TRANSISTOR , IB=400mA IC=5A, IB=1A IC=8A, IB=2A IC=2A, IB=0.4A IC=5A, IB=1A VCB=10V, f=0.1MHz z VCE=10V, IC=500mA Base- Emitter Saturation Voltage Output Capacitance Current Gain-Bandwidth Product Turn On time Storage Time Fall Time 4 110 1.2 1.6 1.6 3 0.7 |
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SHANTOU HUASHAN |
NPN SILICON TRANSISTOR VBE(sat)2 Cob fT tON tSTG tF IC=10mA, IB=0 VEB=9V, IC=0 VCE=5V, IC=5A VCE=5V, IC=8A HFE£¨ 1£© DC Current Gain Collector- Emitter Saturation Voltage 6 30 1 V IC=5A, IB =1A IC=8A, IB =1.6A IC=12A, IB =3A IC=5A, IB=1A IC=8A, IB =1.6A VCB=10V,f=0.1M |
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SHANTOU HUASHAN |
NPN SILICON TRANSISTOR MHz IC=5A, IB=1A IC=8A, IB=1.6A IC=12A, IB=3A IC=5A, IB=1A IC=8A, IB=1.6A VCB=10V, f=0.1MHz VCE=10V, IC=0.5A VCC=125V, IC=8A, IB1=-IB2=1.6A RL=15.6Ω VBE(sat) Cob fT tON tS tF Base- Emitter Saturation Voltage Output Capacitance Current Gain-Bandwi |
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SHANTOU HUASHAN |
NPN SILICON TRANSISTOR VCE=5V, IC=8A DC Current Gain 6 30 1 V V CE ( sat1£© Collector- Emitter Saturation Voltage V CE ( sat2£© V CE ( sat3£© V BE (sat1) V BE (sat2) Cob fT tON tSTG tF Base-Emitter Saturation Voltage Output Capacitance Current Gain-Bandwidth Product T |
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SHANTOU HUASHAN |
NPN SILICON TRANSISTOR t Gain Collector- Emitter Saturation Voltage V V V V V pF MHz IC=5A, IB=1A IC=8A, IB=1.6A IC=12A, IB=3A IC=5A, IB=1A IC=8A, IB=1.6A VCB=10V,f=0.1MHz VCE=10V,IC=0.5A Base-Emitter Saturation Voltage Output Capacitance Current Gain-Bandwidth Product |
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Desde 2024. D4U Semiconductor.
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