Shantou Huashan H90 Hoja de datos

No.	parte #	Fabricante	Descripción
1	H9012	Shantou Huashan	PNP Silicon Transistor tion Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage mV V mV V V V IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA VCE=-1V, IC=-10mA IC=-100
2	H9014	Shantou Huashan	NPN Silicon Transistor
3	H9013	Shantou Huashan Electronic	NPN Silicon Transistor e Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage mV V mV V V V IC=500mA, IB=50mA IC=500mA, IB=50mA VCE=1V, IC=10mA IC=100μA, IE=0 IC=1mA, IB=0 IE=100μA，IC=0 █ hFE Classification w w w .d a t a . u 4 t 78
4	H9018	Shantou Huashan	NPN Silicon Transistor er-Base Breakdown Voltage 54 30 15 5 198 0. 5 V V VCE=5V, IC=1mA IC=10mA, IB=1mA IC=100¦Ì A, IE=0 V IC=1mA, IB=0 V IE=100¦Ì A£¬ IC=0 pF VCB=10V, IE=0£¬ f=1MHz MHz VCE =5V, IC=5mA Output Capacitance Current Gain-Bandwidth Product 700 1.3 1.7 ¨€