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Shantou Huashan Electronic |
NPN Silicon Transistor e Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage mV V mV V V V IC=500mA, IB=50mA IC=500mA, IB=50mA VCE=1V, IC=10mA IC=100μA, IE=0 IC=1mA, IB=0 IE=100μA，IC=0 █ hFE Classification w w w .d a t a . u 4 t 78 |
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Desde 2024. D4U Semiconductor.
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