Shaanxi Qunli 3DG Hoja de datos

No.	parte #	Fabricante	Descripción
1	3DG130	Shaanxi Qunli	NPN Silicon High Frequency Middle Power Transistor 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment
2	3DG12	Shaanxi Qunli Electric	NPN Silicon High Frequency Middle Power Transistor 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment
3	3DG8	Shaanxi Qunli Electric	NPN Silicon High Frequency Low Power Transistor 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment
4	3DG100	Shaanxi Qunli	NPN Silicon High Frequency Low Power Transistor 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment
5	3DG102	Shaanxi Qunli	NPN Silicon High Frequency Low Power Transistor 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment
6	3DG122	Shaanxi Qunli Electric	NPN Silicon High Frequency Middle Power Transistor 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment