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Semtron |
N-Channel Enhancement Mode MOSFET The STN3404 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent This device is suitable for use as a load switch or in PWM applications. STN3404S- |
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Semtron |
N-Channel Enhancement Mode MOSFET The STN3400 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON).low gate charge and operation gate as 2.5V. This device is suitable for us |
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Semtron |
N-Channel Enhancement Mode MOSFET The STN2342A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON).low gate charge and operation gate as 1.8V. This device is suitable for u |
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Semtron |
N-Channel Enhancement Mode MOSFET The STN2302 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). low gate charge and operation gate as 1.8V. This device is suitable for u |
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Semtron |
N-Channel Enhancement Mode MOSFET The STN2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). low gate charge and operation gate as 1.8V. This device is suitable for u |
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Semtron |
Dual N-Channel Enhancement Mode MOSFET The STN4842 is the Dual N-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). This device is suitable for use as a load switch or in PWM and gate |
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Semtron |
N-Channel Enhancement Mode MOSFET The STN3414 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON).low gate charge and operation gate as 1.8V. This device is suitable for us |
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Semtron |
N-Channel Enhancement Mode MOSFET The STN3406 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent This device is suitable for use as a load switch or in PWM applications. STN3406S- |
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Semtron |
N-Channel Enhancement Mode MOSFET The STN3400A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON).low gate charge and operation gate as 2.5V. This device is suitable for u |
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Semtron |
N-Channel Enhancement Mode MOSFET The STN2342 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON).low gate charge and operation gate as 1.8V. This device is suitable for us |
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Semtron |
N-Channel Enhancement Mode MOSFET The STN2306 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state res |
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Semtron |
N-Channel Enhancement Mode MOSFET The STN2300A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). low gate charge and operation gate as 1.8V. This device is suitable for |
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Semtron |
20V N-Channel Enhancement Mode MOSFET The STN8205A is the Dual N-Channel logic enhancement mode power field effect transistor which is produced using high cell density. advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize |
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Desde 2024. D4U Semiconductor.
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