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Semikron |
Miniskiip 8 Semikron Integrated Intelligent Power 00 V IRRM diF/dt = – 800 A/µs Qrr VGE = 0 V, Tj = 125 °C Eoff per diode Rthjh min. – – – – – – – – – – – – – – – typ. max. Units V 2,5(3,1) 3,0(3,7) ns 100 50 ns 110 55 ns 600 400 ns 100 70 mJ – 27 nF – 6,6 K/W 0,25 – V 2,0(1,8) 2,5(2.3) V 1,2 1,0 mΩ |
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Semikron |
3-phase bridge rectifier + IGBT braking chopper j = 25 (125) °C VCEsat td(on) VCC = 600 V; VGE = ± 15 V tr IC = 100 A; Tj = 125 °C Rgon = Rgoff = 11 Ω td(off) tf inductive load Eon + Eoff VCE = 25 V; VGE = 0 V, 1 MHz Cies per IGBT Rthjh V ns ns ns ns mJ nF K/W UL recognized file no. E63532 • spec |
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Semikron |
SKIIP83AC12 00 V IRRM diF/dt = – 800 A/µs Qrr VGE = 0 V, Tj = 125 °C Eoff per diode Rthjh min. – – – – – – – – – – – – – – – typ. max. Units V 2,5(3,1) 3,0(3,7) ns 100 50 ns 110 55 ns 600 400 ns 100 70 mJ – 27 nF – 6,6 K/W 0,25 – V 2,0(1,8) 2,5(2.3) V 1,2 1,0 mΩ |
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Semikron |
3-Phase Bridge Rectifier + IGBT Braking Chopper |
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Semikron |
Miniskiip 8 Semikron Integrated Intelligent Power 00 V IRRM diF/dt = – 800 A/µs Qrr VGE = 0 V, Tj = 125 °C Eoff per diode Rthjh min. – – – – – – – – – – – – – – – typ. max. Units V 2,5(3,1) 3,0(3,7) ns 100 50 ns 110 55 ns 600 400 ns 100 70 mJ – 27 nF – 6,6 K/W 0,25 – V 2,0(1,8) 2,5(2.3) V 1,2 1,0 mΩ |
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Semikron |
Miniskiip 8 Semikron Integrated Intelligent Power Tj = 25 °C Tj = 25 °C Tj = 125 °C – – – – – – – – 5 – – – – 500 – – – – – – – – – 1,15 0,8 4,5 – – – – – – – – 250 600 – – 2,1(2,2) 60 80 330 550 7,3 2,8 – – – – 1,0 1,8 1,1 5 0,9 – 3 150 – – – 125 2,7(2,8) 120 160 500 830 – – 1,0 V V mΩ K/W V V mΩ K |
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Semikron |
Miniskiip 8 Semikron Integrated Intelligent Power – – – typ. max. Units V 2,1(2,2) 2,7(2,8) ns 120 60 ns 160 80 ns 500 330 ns 830 550 mJ – 15 nF – 5,6 K/W 0,5 – V 1,5(1,45) 1,7(1,7) V 0,9 0,85 mΩ 8 6 A – 60 µC – 7,0 mJ – 3,0 K/W 0,75 – ~ ~ ~ UL recognized file no. E63532 • • Current sensor for t |
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Semikron |
Miniskiip 8 Semikron Integrated Intelligent Power – – – typ. max. Units V 2,1(2,2) 2,7(2,8) ns 120 60 ns 160 80 ns 500 330 ns 830 550 mJ – 15 nF – 5,6 K/W 0,5 – V 1,5(1,45) 1,7(1,7) V 0,9 0,85 mΩ 8 6 A – 60 µC – 7,0 mJ – 3,0 K/W 0,75 – ~ ~ ~ UL recognized file no. E63532 • • Current sensor for t |
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Semikron |
Miniskiip 8 Semikron Integrated Intelligent Power 00 V IRRM diF/dt = – 800 A/µs Qrr VGE = 0 V, Tj = 125 °C Eoff per diode Rthjh min. – – – – – – – – – – – – – – – typ. max. Units V 2,5(3,1) 3,0(3,7) ns 100 50 ns 110 55 ns 600 400 ns 100 70 mJ – 27 nF – 6,6 K/W 0,25 – V 2,0(1,8) 2,5(2.3) V 1,2 1,0 mΩ |
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Semikron |
Miniskiip 8 Semikron Integrated Intelligent Power 5 °C Tj = 25 °C Tj = 25 °C Tj = 125 °C – – – – – – – – 5 – – – – 500 – – – – – – – – – 1,15 0,8 3,5 – – – – – – – – 250 600 – – 2,5(3,1) 35 70 450 70 18 5,0 – – – – 0,7 1,8 1,1 5 0,9 – 3 150 – – – 125 3,0(3,7) 70 140 600 100 – – 0,35 V V mΩ K/W V V m |
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Semikron |
Miniskiip 8 Semikron Integrated Intelligent Power 3-phase Bridge Rectifier + Igbt Braking Chopper – – – 1,2 V V mΩ K/W min. typ. max. Units IGBT - Chopper IC = 75 A Tj = 25 (125) °C VCEsat td(on) VCC = 600 V; VGE = ± 15 V tr IC = 75 A; Tj = 125 °C Rgon = Rgoff = 15 Ω td(off) tf inductive load Eon + Eoff VCE = 25 V; VGE = 0 V, 1 MHz Cies per |
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Semikron |
3-phase bridge rectifier + IGBT braking chopper C Tj = 125 °C – – – – – – – – 5 – – – – 500 – – – – – – – – – 1,15 0,8 4,5 – – – – – – – – 250 600 – – 2,1(2,2) 60 80 330 550 7,3 2,8 – – – – 1,0 1,8 1,1 5 0,9 – 3 150 – – – 125 2,7(2,8) 120 160 500 830 – – 1,0 V V mΩ K/W V V mΩ K/W mA V mA mA mA V/µ |
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Desde 2024. D4U Semiconductor.
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