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Semikron |
Miniskiip 8 Semikron Integrated Intelligent Power °C Tj = 125 °C – – – – – – – – 5 – – – – 500 – – – – – – – – – 1,15 0,8 4,5 – – – – – – – – 250 600 – – 2,5(3,1) 44 56 380 70 13 3,3 – – – – 1,0 1,8 1,1 5 0,9 – 3 150 – – – 125 3,0(3,7) 100 100 500 100 – – 0,5 V V mΩ K/W V V mΩ K/W mA V mA mA mA V/µ |
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Semikron |
SKIIP82AC12 Tj = 125 °C Eoff per diode Rthjh min. – – – – – – – – – – – – – – – typ. max. Units V 2,5(3,1) 3,0(3,7) ns 70 35 ns 140 70 ns 600 450 ns 100 70 mJ – 18 nF – 5,0 K/W 0,35 – V 2,0(1,8) 2,5(2.3) V 1,2 1,0 mΩ 15 11 A – 45 µC – 11 mJ – 3,0 K/W 0,8 – ~ ~ |
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Semikron |
IGBT 3-phase bridge inverter Tj = 125 °C Eoff per diode Rthjh min. – – – – – – – – – – – – – – – typ. max. Units V 2,5(3,1) 3,0(3,7) ns 70 35 ns 140 70 ns 600 450 ns 100 70 mJ – 18 nF – 5,0 K/W 0,35 – V 2,0(1,8) 2,5(2.3) V 1,2 1,0 mΩ 15 11 A – 45 µC – 11 mJ – 3,0 K/W 0,8 – ~ ~ |
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Semikron |
Miniskiip 8 Semikron Integrated Intelligent Power 3-phase Bridge Rectifier + Igbt Braking Chopper min. typ. max. Units IGBT - Chopper IC = 50 A Tj = 25 (125) °C VCEsat td(on) VCC = 600 V; VGE = ± 15 V tr IC = 50 A; Tj = 125 °C Rgon = Rgoff = 22 Ω td(off) tf inductive load Eon + Eoff VCE = 25 V; VGE = 0 V, 1 MHz Cies per IGBT Rthjh Diode 2) - |
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Semikron |
Miniskiip 8 Semikron Integrated Intelligent Power 2,2) 2,7(2,8) ns 100 50 ns 160 80 ns 370 250 ns 750 500 mJ – 8,0 nF – 3,2 K/W 0,85 – V 1,45(1,4) 1,7(1,7) V 0,9 0,85 mΩ 11 7 A – 53 µC – 6,0 mJ – 2,3 K/W 1,0 – ~ ~ ~ UL recognized file no. E63532 • • Current sensor for three phase output ac curre |
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Semikron |
Miniskiip 8 Semikron Integrated Intelligent Power 2,2) 2,7(2,8) ns 100 50 ns 160 80 ns 370 250 ns 750 500 mJ – 8,0 nF – 3,2 K/W 0,85 – V 1,45(1,4) 1,7(1,7) V 0,9 0,85 mΩ 11 7 A – 53 µC – 6,0 mJ – 2,3 K/W 1,0 – ~ ~ ~ UL recognized file no. E63532 • • Current sensor for three phase output ac curre |
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Semikron |
Miniskiip 8 Semikron Integrated Intelligent Power Tj = 125 °C Eoff per diode Rthjh min. – – – – – – – – – – – – – – – typ. max. Units V 2,5(3,1) 3,0(3,7) ns 70 35 ns 140 70 ns 600 450 ns 100 70 mJ – 18 nF – 5,0 K/W 0,35 – V 2,0(1,8) 2,5(2.3) V 1,2 1,0 mΩ 15 11 A – 45 µC – 11 mJ – 3,0 K/W 0,8 – ~ ~ |
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Semikron |
Miniskiip 8 Semikron Integrated Intelligent Power Tj = 125 °C Eoff per diode Rthjh min. – – – – – – – – – – – – – – – typ. max. Units V 2,5(3,1) 3,0(3,7) ns 70 35 ns 140 70 ns 600 450 ns 100 70 mJ – 18 nF – 5,0 K/W 0,35 – V 2,0(1,8) 2,5(2.3) V 1,2 1,0 mΩ 15 11 A – 45 µC – 11 mJ – 3,0 K/W 0,8 – ~ ~ |
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Semikron |
Miniskiip 8 Semikron Integrated Intelligent Power j = 125 °C – – – – – – – – 3 – – – – 500 – – – – – – – – – 1,15 0,8 10 – – – – – – – – 200 400 – – 2,1(2,2) 50 80 250 500 4,0 1,6 – – – – 1,6 1,8 1,0 10 1,3 – 3 100 – – – 125 2,7(2,8) 100 160 370 750 – – 1,8 V V mΩ K/W V V mΩ K/W mA V mA mA mA V/µs A |
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Semikron |
IGBT 3-phase bridge inverter Tj = 125 °C Eoff per diode Rthjh min. – – – – – – – – – – – – – – – typ. max. Units V 2,5(3,1) 3,0(3,7) ns 70 35 ns 140 70 ns 600 450 ns 100 70 mJ – 18 nF – 5,0 K/W 0,35 – V 2,0(1,8) 2,5(2.3) V 1,2 1,0 mΩ 15 11 A – 45 µC – 11 mJ – 3,0 K/W 0,8 – ~ ~ |
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Desde 2024. D4U Semiconductor.
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