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SemiHow |
N-Channel MOSFET Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 110 nC (Typ.) Extended Safe Operating Area Lower RDS |
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SemiHow |
500V N-Channel MOSFET Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 58 nC (Typ.) Extended Safe Operating Area Lower RDS( |
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SemiHow |
N-Channel MOSFET Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant Built-in ESD Diode Key Parameters Parameter BVDSS ID RDS(on), Ty |
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SemiHow |
N-Channel MOSFET Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 75 nC (Typ.) Extended Safe Operating Area Lower RDS( |
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SemiHow |
900V N-Channel MOSFET Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 55 nC (Typ.) Extended Safe Operating Area Lower RDS( |
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Desde 2024. D4U Semiconductor.
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