Seme LAB D22 Hoja de datos

No.	parte #	Fabricante	Descripción
1	D2225UK	Seme LAB	METAL GATE RF SILICON FET H K L J E F G M • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS PIN 5 – SOURCE PIN 6 – GATE 2 PIN 7 – GATE 1 PIN 8 – SOURCE Tol. ±0.08 ±0.08 ±0.08 ±0.08 ±0.08 ±0.08 ±0.08 +0.25 -0.00 Min. Max. Max. Min. Max. ±0.08 Max. ±0.08
2	D2253UK	Seme LAB	METAL GATE RF SILICON FET I P H G • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 10 dB MINIMUM DBC4 Package PIN 1 Source (Common) PIN 5 Source (Common) PIN 2 Drain 1 PIN 3 Drain 2 PIN 6
3	D2294UK	Seme LAB	METAL GATE RF SILICON FET • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 11 dB MINIMUM SOT 171 PIN 1 PIN 3 PIN 5 SOURCE GATE SOURCE PIN 2 PIN 4 PIN 6 SOURCE DRAIN SOURCE APPLICATIONS • HF
4	D2210UK	Seme LAB	METAL GATE RF SILICON FET • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from DC to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless other
5	D2212UK	Seme LAB	METAL GATE RF SILICON FET • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from DC to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless other
6	D2218UK	Seme LAB	METAL GATE RF SILICON FET • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from DC to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless other
7	D2205UK	Seme LAB	METAL GATE RF SILICON FET • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from 1 MHz to 1GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless oth
8	D2290UK	Seme LAB	METAL GATE RF SILICON FET • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz PD BVDSS BVGSS ID(sat) Tstg Tj Power Di
9	D2221UK	Seme LAB	METAL GATE RF SILICON FET H K L J E F G M • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS PIN 5 – SOURCE PIN 6 – GATE PIN 7 – GATE PIN 8 – SOURCE SO8 PACKAGE PIN 1 – SOURCE PIN 2 – DRAIN PIN 3 – DRAIN PIN 4 – SOURCE • VERY LOW Crss • SIMPLE BIAS CI
10	D2229UK	Seme LAB	METAL GATE RF SILICON FET 0.10 TYP. 0.508 0.10 TYP. • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS F-0127 PACKAGE PIN 1 – SOURCE PIN 2 – DRAIN PIN 3 – DRAIN PIN 4 – SOURCE PIN 5 – SOURCE PIN 6 – GATE PIN 7 – GATE PIN 8 – SOURCE • VERY LOW Crss • SIMP
11	D2254UK	Seme LAB	METAL GATE RF SILICON FET • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 10 dB MINIMUM I P H G DBC4 Package PIN 1 Source (Common) PIN 5 Source (Common) PIN 2 Drain 1 PIN 3 Drain 2 PIN 6 G
12	D2293UK	Seme LAB	METAL GATE RF SILICON FET • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 11 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C u
13	D2211UK	Seme LAB	METAL GATE RF SILICON FET • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • LOW NOISE • HIGH GAIN APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 2 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD Power Dissipati
14	D2213UK	Seme LAB	METAL GATE RF SILICON FET • SIMPLIFIED AMPLIFIER DESIGN G (4 pls) F H J I M N • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE DK PIN 1 PIN 3 PIN 5 SOURCE (COMMON) PIN 2 DRAIN 2 GATE 1 DIM A B C D E F G H I J K M N mm 6.45 1.65
15	D2219UK	Seme LAB	METAL GATE RF SILICON FET • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C u
16	D2201UK	Seme LAB	METAL GATE RF SILICON FET • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless ot
17	D2224UK	Seme LAB	METAL GATE RF SILICON FET H K L J E F G M • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN SO8 PACKAGE PIN 1 – SOURCE PIN 2 – DRAIN PIN 3 – DRAIN PIN 4 – SOURCE Dim. A B C D E F G H J K L
18	D2230UK	Seme LAB	METAL GATE RF SILICON FET 0.508 • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS F-0127 PACKAGE PIN 1 – SOURCE PIN 2 – DRAIN PIN 3 – DRAIN PIN 4 – SOURCE PIN 5 – SOURCE PIN 6 – GATE PIN 7 – GATE PIN 8 – SOURCE • VERY LOW Crss • SIMPLE BIAS CIRCUITS
19	D2231UK	Seme LAB	METAL GATE RF SILICON FET 0.10 TYP. 0.508 0.10 TYP. • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS F-0127 PACKAGE PIN 1 – SOURCE PIN 2 – DRAIN PIN 3 – DRAIN PIN 4 – SOURCE PIN 5 – SOURCE PIN 6 – GATE PIN 7 – GATE PIN 8 – SOURCE • VERY LOW Crss • SIMP
20	D2232UK	Seme LAB	METAL GATE RF SILICON FET 0.10 TYP. 0.508 0.10 TYP. • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS F-0127 PACKAGE PIN 1 – SOURCE PIN 2 – DRAIN PIN 3 – DRAIN PIN 4 – SOURCE PIN 5 – SOURCE PIN 6 – GATE PIN 7 – GATE PIN 8 – SOURCE • VERY LOW Crss • SIMP