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Seme LAB |
METAL GATE RF SILICON FET I P H G DBC1 Package PIN 1 Source PIN 2 Drain PIN 3 Drain PIN 4 Source DIM A B C D E F G H I J K L M N O P Q mm 6.47 0.76 45° 0.76 1.14 2.67 11.73 8.43 7.92 0.20 0.64 0.30 3.25 2.11 6.35SQ 1.65 0.13 PIN 5 Source PIN 6 Gate PIN 7 Gate PIN 8 Source |
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Seme LAB |
METAL GATE RF SILICON FET • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 17 dB MINIMUM DIM mm A 26.16 B 5.72 C 45° D 7.11 E 0.13 F 1.40 G 1.52 H 3.05 Tol. 0.38 0.13 5° 0.13 0.02 |
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Seme LAB |
METAL GATE RF SILICON FET • SIMPLIFIED AMPLIFIER DESIGN G (4 pls) F H J I M N • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE DK PIN 1 PIN 3 PIN 5 SOURCE (COMMON) PIN 2 DRAIN 2 GATE 1 DIM A B C D E F G H I J K M N mm 6.45 1.65 |
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Seme LAB |
TetraFET 0V V = 28V V = 28V ID = 10mA VDS = VGS VGS = -5V I = 2A 1 65 Typ. Max. Unit V 2 1 7 mA µA V mhos pF pF pF 0.1 V 1.6 86 35 2 TOTAL DEVICE IDQ = 1.6A Thermal Resistance = 1.0 °C / W HAZARDOUS MATERIAL WARNING The ceramic portion of the device betw |
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Seme LAB |
METAL GATE RF SILICON FET F E D 2 C (2 p ls) A • SIMPLIFIED AMPLIFIER DESIGN GATE DRAIN PIN 1 PIN 3 SOURCE SOURCE PIN 2 PIN 4 • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS DIM A B C D E F G H Millimetres 25.40 45° 0.76 5.21 DIA 1.02 0.13 3. |
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Seme LAB |
METAL GATE RF SILICON FET • SIMPLIFIED AMPLIFIER DESIGN • VERY LOW Crss m o .c TetraFET D2020UK –P METAL GATE RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz SINGLE ENDED • SUITABLE FOR BROAD BAND APPLICATIONS w w w t a .D S a • SIM |
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Seme LAB |
METAL GATE RF SILICON FET • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND G (4 PLS) N D (2 PLS) M SOT 171 PIN 1 PIN 3 PIN 5 DIM A B C D E F G H I J K L M N O SOURCE GATE SOURCE mm 10.92 5.84 2.54 3.30 dia 9.14 3.05 2.01 1.04 18.42 24.77 2.74 9.14 4.19 0.13 7.11 PIN |
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Seme LAB |
RF SILICON FET • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from DC to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless other |
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Seme LAB |
METAL GATE RF SILICON FET • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from 50 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unl |
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Seme LAB |
METAL GATE RF SILICON FET H K L J E F G M • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS PIN 5 – SOURCE PIN 6 – GATE PIN 7 – GATE PIN 8 – SOURCE SO8 PACKAGE PIN 1 – SOURCE PIN 2 – DRAIN PIN 3 – DRAIN PIN 4 – SOURCE • VERY LOW Crss • SIMPLE BIAS CI |
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Seme LAB |
METAL GATE RF SILICON FET • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C u |
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Seme LAB |
METAL GATE RF SILICON FET 0.10 TYP. 0.508 0.10 TYP. • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS F-0127 PACKAGE PIN 1 – SOURCE PIN 2 – DRAIN PIN 3 – DRAIN PIN 4 – SOURCE PIN 5 – SOURCE PIN 6 – GATE PIN 7 – GATE PIN 8 – SOURCE • VERY LOW Crss • SIMP |
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Seme LAB |
METAL GATE RF SILICON FET • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss 1 .7 0 m ax. 10˚ m ax. 6 .7 6 .3 3 .1 2 .9 4 3 .7 7 .3 3 .3 6 .7 • SIMPLE BIAS CIRCUITS • LOW NOISE (Typical < 2dB NF) • HIGH GAIN – 11dB MINIMUM • SURFACE MOUNT 3 1 |
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Seme LAB |
TetraFET V V = 28V V = 28V ID = 10mA VDS = VGS VGS = -5V I = 2A 1 65 Typ. Max. Unit V 3 1 7 mA µA V mhos pF pF pF 0.1 V 2.5 128 51 2.7 TOTAL DEVICE IDQ = 2A Thermal Resistance = 0.72 °C / W HAZARDOUS MATERIAL WARNING The ceramic portion of the device bet |
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Seme LAB |
TetraFET 00MHz V = 28V I = 100mA V = 28V V = 20V I = 10mA V = 10V T = 300mS VDS = 0V V = 28V V = 28V ID = 10mA VDS = VGS VGS = -5V I = 3A 1 65 Typ. Max. Unit V 4 1 7 mA mA V mhos pF pF pF 3.2 170 68 3.6 0.1 V TOTAL DEVICE IDQ = 3A Thermal Resistance = 0 |
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Seme LAB |
METAL GATE RF SILICON FET H K L J E F G M • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS PIN 5 – SOURCE PIN 6 – GATE PIN 7 – GATE PIN 8 – SOURCE SO8 PACKAGE PIN 1 – SOURCE PIN 2 – DRAIN PIN 3 – DRAIN PIN 4 – SOURCE • VERY LOW Crss Dim. A B C D E |
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Seme LAB |
METAL GATE RF SILICON FET • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from DC to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless other |
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Seme LAB |
METAL GATE RF SILICON FET • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from 50 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless o |
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Seme LAB |
METAL GATE RF SILICON FET • SIMPLIFIED AMPLIFIER DESIGN G (4 pls) F H J I M N • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE DK PIN 1 PIN 3 PIN 5 SOURCE (COMMON) PIN 2 DRAIN 2 GATE 1 DIM A B C D E F G H I J K M N mm 6.45 1.65 |
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Seme LAB |
METAL GATE RF SILICON FET • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from DC to 2 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unle |
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Desde 2024. D4U Semiconductor.
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