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Seme LAB |
N-channel MOSFET • V(BR)DSS = 60V • RDS(ON) = 5Ω • ID = 200mA • Hermetic Ceramic Surface Mount package • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C unless otherwise stated) VDS Drain – Source Voltage 60V VGS Gate – Source Voltage ±40V |
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Seme LAB |
N-CHANNEL POWER MOSFET • REPETITIVE AVALANCHE RATING • ISOLATED AND HERMETICALLY SEALED • ALTERNATIVE TO TO-3 PACKAGE 100V 34A 0.070W 1 2 3 0.89 (0.035) 1.14 (0.045) 3.81 (0.150) BSC 20.07 (0.790) 20.32 (0.800) 3.81 (0.150) BSC • SIMPLE DRIVE REQUIREMENTS • EASE OF |
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Seme LAB |
P-CHANNEL TRANSISTOR • TO257AB HERMETIC PACKAGE FOR HIGH RELIABILITY APPLICATIONS • SCREENING OPTIONS AVAILBLE • SIMPLE DRIVE REQUIREMENTS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDS Drain – Source Voltage - 100V VGS Gate – Source Voltage ±20 |
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Seme LAB |
N-channel MOSFET 2.54 ± 0.13 (0.10 ± 0.005) 3 2 1 0.76 ± 0.15 (0.03 ± 0.006) • V(BR)DSS = 60V A 1.40 (0.055) max. 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) A= 0.31 rad. (0.012) • RDS(ON) = 7.5Ω • ID = 0.115A 1.02 ± 0.10 (0.04 ± 0.004) SOT23 CE |
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Seme LAB |
N-CHANNEL POWER MOSFET • TO –220 ISOLATED HERMETIC PACKAGE • LOW RDS(ON) 0.64 (0.025) Dia. 0.89 (0.035) 2.54 (0.100) BSC 3.05 (0.120) BSC • SIMPLE DRIVE REQUIREMENTS TO –220 Metal Package Pin 1 – Gate Pin 2 – Drain Pin 3 – Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unl |
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Seme LAB |
N-CHANNEL ENHANCEMENT MODE TRANSISTOR • TO257AB HERMETIC PACKAGE FOR HIGH RELIABILITY APPLICATIONS • SCREENING OPTIONS AVAILBLE TO –257AB Metal Package Pin 1 – Gate Pin 2 – Drain Pin 3 – Source • SIMPLE DRIVE REQUIREMENTS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) |
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Seme LAB |
N-CHANNEL ENHANCEMENT MODE TRANSISTOR • TO257AB HERMETIC PACKAGE FOR HIGH RELIABILITY APPLICATIONS • SCREENING OPTIONS AVAILBLE TO –257AB Metal Package Pin 1 – Gate Pin 2 – Drain Pin 3 – Source • SIMPLE DRIVE REQUIREMENTS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) |
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Seme LAB |
Bipolar NPN Device ts use. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Generated 2-Aug-02 |
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Seme LAB |
Dual N-Channel MOSFET • V(BR)DSS = 60V • RDS(ON) = 7.5Ω • ID = 0.115A 6 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) 6.22 ± 0.13 (0.245 ± 0.005) CERAMIC LCC2 PACKAGE (underside view) PAD 1 - Drain 1 PAD 2 - Gate 1 PAD 3 - Gate 2 PAD 4 - Drain 2 PAD 5 - Source 2 PA |
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Seme LAB |
N-CHANNEL POWER MOSFET 200V 27.4A 0.100Ω 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT – EFFICIENT USE OF PCB SPACE. 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 |
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Seme LAB |
Bipolar NPN Device ions discovered in its use. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Generated 2-Aug-02 |
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Seme LAB |
N-CHANNEL POWER MOSFET • TO –220 ISOLATED HERMETIC PACKAGE • LOW RDS(ON) 0.64 (0.025) Dia. 0.89 (0.035) 2.54 (0.100) BSC 3.05 (0.120) BSC • SIMPLE DRIVE REQUIREMENTS TO –220 Metal Package Pin 1 – Gate Pin 2 – Drain Pin 3 – Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unl |
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Seme LAB |
NCHANNEL POWER MOSFET • N –CHANNEL MOSFET • HIGH VOLTAGE 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 200V 18A 0.18Ω 1 2 3 20.07 (0.790) 20.32 (0.800) 0.89 (0.035) 1.14 (0.045) 3.81 (0.150) BSC • HERMETIC ISOLATED TO-254 PACKA |
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Seme LAB |
Bipolar NPN Device |
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Desde 2024. D4U Semiconductor.
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