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Secos |
2SC1984L Power dissipation 2.0 +0.3 –0.2 14 ±0. 2 1 0. 45 +0. –0.1 05 0.4 0 +0. –0. 05 PCM: Collector current ICM: 1 W (Tamb=25℃) 1 A 1.0±0.1 Collector-base voltage V(BR)CBO: 2SC1383L: 30 V 2SC1384L: 60 V Operating and storage junction temperature range T |
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SeCoS Halbleitertechnologie GmbH |
(2SC1983L / 2SC1984L) NPN Silicon General Purpose Transistor Power dissipation 2.0 +0.3 –0.2 14 ±0. 2 1 0. 45 +0. –0.1 05 0.4 0 +0. –0. 05 PCM: Collector current ICM: 1 W (Tamb=25℃) 1 A 1.0±0.1 Collector-base voltage V(BR)CBO: 2SC1383L: 30 V 2SC1384L: 60 V Operating and storage junction temperature range T |
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SeCoS |
NPN Transistor General purpose switching and amplification. CLASSIFICATION OF hFE Product-Rank 2SC1923-O Range 70~140 2SC1923-Y 100~200 MARKING hFE Rank hFE Rank C1923 O 031 C1923 Y 031 TO-92 AD B E CF GH Emitter Collector J Base REF. A B C D E Mill |
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SeCoS |
NPN Plastic Encapsulated Transistor Excellent hFE Linearity High Transition Frequency CLASSIFICATION OF hFE Product-Rank 2SC1959-O hFE(1) Range hFE(2) 70~140 25 (Min) 2SC1959-Y 120~240 40 (Min) 2SC1959-GR 200~400 - MARKING C1959 031 Collector Base Emitter ABSOLUTE M |
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SeCoS Halbleitertechnologie GmbH |
(2SC1983L / 2SC1984L) NPN Silicon General Purpose Transistor Power dissipation 2.0 +0.3 –0.2 14 ±0. 2 1 0. 45 +0. –0.1 05 0.4 0 +0. –0. 05 PCM: Collector current ICM: 1 W (Tamb=25℃) 1 A 1.0±0.1 Collector-base voltage V(BR)CBO: 2SC1383L: 30 V 2SC1384L: 60 V Operating and storage junction temperature range T |
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Desde 2024. D4U Semiconductor.
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